Title: Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

Abstract

Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

Inventors:

Sopori, Bhushan; Rangappan, Anikara

Issue Date:

2014-11-25

Research Org.:

National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1164345

Patent Number(s):

8895416

Application Number:

13/793,626

Assignee:

Alliance for Sustainable Energy, LLC (Golden, CO)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05B - ELECTRIC HEATING

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/02433 - {Crystal orientation}
H01L21/0245 - {Silicon, silicon germanium, germanium}
H01L21/02513 - {Microstructure}
H01L21/02532 - {Silicon, silicon germanium, germanium}
H01L21/02592 - {amorphous}
H01L21/02609 - {Crystal orientation}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L21/67115 - {mainly by radiation}
H01L21/6776 - {Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers}
H01L31/068 - the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L31/0747 - comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells
H01L31/1804 - {comprising only elements of Group IV of the Periodic System}
H01L31/1872 - {Recrystallisation}
H01L31/20 - such devices or parts thereof comprising amorphous semiconductor materials

H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05B - ELECTRIC HEATING

H05B3/0047 - {for semiconductor manufacture}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/547 - Monocrystalline silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:  

AC36-08GO28308

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 14 SOLAR ENERGY