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Title: Frequency selective infrared sensors

Abstract

A frequency selective infrared (IR) photodetector having a predetermined frequency band. The exemplary frequency selective photodetector includes: a dielectric IR absorber having a first surface and a second surface substantially parallel to the first surface; an electrode electrically coupled to the first surface of the dielectric IR absorber; and a frequency selective surface plasmonic (FSSP) structure formed on the second surface of the dielectric IR absorber. The FSSP structure is designed to selectively transmit radiation in the predetermined frequency band that is incident on the FSSP structure substantially independent of the angle of incidence of the incident radiation on the FSSP structure.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1164341
Patent Number(s):
8897609
Application Number:
13/871,676
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01J - MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Davids, Paul, and Peters, David W. Frequency selective infrared sensors. United States: N. p., 2014. Web.
Davids, Paul, & Peters, David W. Frequency selective infrared sensors. United States.
Davids, Paul, and Peters, David W. Tue . "Frequency selective infrared sensors". United States. https://www.osti.gov/servlets/purl/1164341.
@article{osti_1164341,
title = {Frequency selective infrared sensors},
author = {Davids, Paul and Peters, David W},
abstractNote = {A frequency selective infrared (IR) photodetector having a predetermined frequency band. The exemplary frequency selective photodetector includes: a dielectric IR absorber having a first surface and a second surface substantially parallel to the first surface; an electrode electrically coupled to the first surface of the dielectric IR absorber; and a frequency selective surface plasmonic (FSSP) structure formed on the second surface of the dielectric IR absorber. The FSSP structure is designed to selectively transmit radiation in the predetermined frequency band that is incident on the FSSP structure substantially independent of the angle of incidence of the incident radiation on the FSSP structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {11}
}

Works referenced in this record:

Exciton−Plasmon Interactions in Metal−Semiconductor Nanostructures
journal, September 2010


Fabrication and testing of plasmonic optimized transmission and reflection coatings
conference, February 2008


Plasmonic integrated optics: Going the last few microns
conference, July 2010


Comparison of nBn and nBp mid-wave barrier infrared photodetectors
conference, January 2010


A monolithically integrated plasmonic infrared quantum dot camera
journal, April 2011


Plasmon-based photosensors comprising a very thin semiconducting region
journal, May 2009