Frequency selective infrared sensors
Abstract
A frequency selective infrared (IR) photodetector having a predetermined frequency band. The exemplary frequency selective photodetector includes: a dielectric IR absorber having a first surface and a second surface substantially parallel to the first surface; an electrode electrically coupled to the first surface of the dielectric IR absorber; and a frequency selective surface plasmonic (FSSP) structure formed on the second surface of the dielectric IR absorber. The FSSP structure is designed to selectively transmit radiation in the predetermined frequency band that is incident on the FSSP structure substantially independent of the angle of incidence of the incident radiation on the FSSP structure.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1164341
- Patent Number(s):
- 8897609
- Application Number:
- 13/871,676
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01J - MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Davids, Paul, and Peters, David W. Frequency selective infrared sensors. United States: N. p., 2014.
Web.
Davids, Paul, & Peters, David W. Frequency selective infrared sensors. United States.
Davids, Paul, and Peters, David W. Tue .
"Frequency selective infrared sensors". United States. https://www.osti.gov/servlets/purl/1164341.
@article{osti_1164341,
title = {Frequency selective infrared sensors},
author = {Davids, Paul and Peters, David W},
abstractNote = {A frequency selective infrared (IR) photodetector having a predetermined frequency band. The exemplary frequency selective photodetector includes: a dielectric IR absorber having a first surface and a second surface substantially parallel to the first surface; an electrode electrically coupled to the first surface of the dielectric IR absorber; and a frequency selective surface plasmonic (FSSP) structure formed on the second surface of the dielectric IR absorber. The FSSP structure is designed to selectively transmit radiation in the predetermined frequency band that is incident on the FSSP structure substantially independent of the angle of incidence of the incident radiation on the FSSP structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {11}
}
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Works referenced in this record:
Photodetector with a Plasmonic Structure
patent-application, June 2011
- Gravrand, Olivier; Destefanis, Gerard; Le-Perchec, Jerome
- US Patent Application 12/955659; 20110156189
Exciton−Plasmon Interactions in Metal−Semiconductor Nanostructures
journal, September 2010
- Achermann, Marc
- The Journal of Physical Chemistry Letters, Vol. 1, Issue 19
Fabrication and testing of plasmonic optimized transmission and reflection coatings
conference, February 2008
- Cruz-Cabrera, A. A.; Basilio, L. I.; Peters, D. W.
- MOEMS-MEMS 2008 Micro and Nanofabrication, SPIE Proceedings
Plasmonic integrated optics: Going the last few microns
conference, July 2010
- Davids, P. S.
- 2010 IEEE Photonics Society Summer Topical Meeting Series, IEEE Photonics Society Summer Topicals 2010
Comparison of nBn and nBp mid-wave barrier infrared photodetectors
conference, January 2010
- Klem, J. F.; Kim, J. K.; Cich, M. J.
- OPTO, SPIE Proceedings
A monolithically integrated plasmonic infrared quantum dot camera
journal, April 2011
- Lee, Sang Jun; Ku, Zahyun; Barve, Ajit
- Nature Communications, Vol. 2, Issue 1
Plasmon-based photosensors comprising a very thin semiconducting region
journal, May 2009
- Le Perchec, J.; Desieres, Y.; Espiau de Lamaestre, R.
- Applied Physics Letters, Vol. 94, Issue 18