Title: Stable and metastable nanowires displaying locally controllable properties

Abstract

Vapor-liquid-solid growth of nanowires is tailored to achieve complex one-dimensional material geometries using phase diagrams determined for nanoscale materials. Segmented one-dimensional nanowires having constant composition display locally variable electronic band structures that are determined by the diameter of the nanowires. The unique electrical and optical properties of the segmented nanowires are exploited to form electronic and optoelectronic devices. Using gold-germanium as a model system, in situ transmission electron microscopy establishes, for nanometer-sized Au--Ge alloy drops at the tips of Ge nanowires (NWs), the parts of the phase diagram that determine their temperature-dependent equilibrium composition. The nanoscale phase diagram is then used to determine the exchange of material between the NW and the drop. The phase diagram for the nanoscale drop deviates significantly from that of the bulk alloy.

Inventors:

Sutter, Eli Anguelova; Sutter, Peter Werner

Issue Date:

Tue Nov 18 00:00:00 EST 2014

Research Org.:

Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1163986

Patent Number(s):

8890115

Application Number:

13/526,239

Assignee:

Brookhaven Science Associates, LLC (Upton, NY)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y20/00 - Nanooptics, e.g. quantum optics or photonic crystals
B82Y30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y40/00 - Manufacture or treatment of nanostructures

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02521 - {Materials}
H01L21/02532 - {Silicon, silicon germanium, germanium}
H01L21/02603 - {Nanowires}
H01L21/02609 - {Crystal orientation}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02645 - {Seed materials}
H01L21/02653 - {Vapour-liquid-solid growth}
H01L29/0665 - {the shape of the body defining a nanostructure
H01L29/0669 - {Nanowires or nanotubes
H01L29/0673 - {oriented parallel to a substrate}

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DOE Contract Number:  

AC02-98CH10886

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE