Title: High energy storage capacitor by embedding tunneling nano-structures

Abstract

In an All-Electron Battery (AEB), inclusions embedded in an active region between two electrodes of a capacitor provide enhanced energy storage. Electrons can tunnel to/from and/or between the inclusions, thereby increasing the charge storage density relative to a conventional capacitor. One or more barrier layers is present in an AEB to block DC current flow through the device. The AEB effect can be enhanced by using multi-layer active regions having inclusion layers with the inclusions separated by spacer layers that don't have the inclusions. The use of cylindrical geometry or wrap around electrodes and/or barrier layers in a planar geometry can enhance the basic AEB effect. Other physical effects that can be employed in connection with the AEB effect are excited state energy storage, and formation of a Bose-Einstein condensate (BEC).

Inventors:

Holme, Timothy P; Prinz, Friedrich B; Van Stockum, Philip B

Issue Date:

2014-11-04

Research Org.:

Stanford Univ., CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1163240

Patent Number(s):

8877367

Application Number:

12/928,346

Assignee:

The Board of Trustees of the Leland Stanford Junior University (Palo Alto, CA)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS

H01G11/26 - characterised by the structures of the electrodes, e.g. multi-layered, shapes, dimensions, porosities or surface features
H01G11/28 - arranged or disposed on a current collector
H01G11/52 - Separators
H01G4/06 - Solid dielectrics
H01G4/085 - {Vapour deposited}
H01G4/33 - Thin- or thick-film capacitors
H01G9/02 - Diaphragms
H01G9/048 - characterised by their structure

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L28/40 - {Capacitors}
H01L29/127 - {Quantum box structures}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E60/13 - Ultracapacitors, supercapacitors, double-layer capacitors

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02T - CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION

Y02T10/70 - Energy storage for electromobility

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DOE Contract Number:  

SC0001060

Resource Type:

Patent

Resource Relation:

Patent File Date: 2010 Dec 09

Country of Publication:

United States

Language:

English

Subject:

25 ENERGY STORAGE