Memristor using a transition metal nitride insulator
Abstract
Apparatus is disclosed in which at least one resistive switching element is interposed between at least a first and a second conducting electrode element. The resistive switching element comprises a metal oxynitride. A method for making such a resistive switching element is also disclosed.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1162107
- Patent Number(s):
- 8872246
- Application Number:
- 13/750,451
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014 Oct 28
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Stevens, James E, Marinella, Matthew, and Lohn, Andrew John. Memristor using a transition metal nitride insulator. United States: N. p., 2014.
Web.
Stevens, James E, Marinella, Matthew, & Lohn, Andrew John. Memristor using a transition metal nitride insulator. United States.
Stevens, James E, Marinella, Matthew, and Lohn, Andrew John. Tue .
"Memristor using a transition metal nitride insulator". United States. https://www.osti.gov/servlets/purl/1162107.
@article{osti_1162107,
title = {Memristor using a transition metal nitride insulator},
author = {Stevens, James E and Marinella, Matthew and Lohn, Andrew John},
abstractNote = {Apparatus is disclosed in which at least one resistive switching element is interposed between at least a first and a second conducting electrode element. The resistive switching element comprises a metal oxynitride. A method for making such a resistive switching element is also disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 28 00:00:00 EDT 2014},
month = {Tue Oct 28 00:00:00 EDT 2014}
}
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