skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Memristor using a transition metal nitride insulator

Abstract

Apparatus is disclosed in which at least one resistive switching element is interposed between at least a first and a second conducting electrode element. The resistive switching element comprises a metal oxynitride. A method for making such a resistive switching element is also disclosed.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1162107
Patent Number(s):
8,872,246
Application Number:
13/750,451
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Oct 28
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Stevens, James E, Marinella, Matthew, and Lohn, Andrew John. Memristor using a transition metal nitride insulator. United States: N. p., 2014. Web.
Stevens, James E, Marinella, Matthew, & Lohn, Andrew John. Memristor using a transition metal nitride insulator. United States.
Stevens, James E, Marinella, Matthew, and Lohn, Andrew John. Tue . "Memristor using a transition metal nitride insulator". United States. https://www.osti.gov/servlets/purl/1162107.
@article{osti_1162107,
title = {Memristor using a transition metal nitride insulator},
author = {Stevens, James E and Marinella, Matthew and Lohn, Andrew John},
abstractNote = {Apparatus is disclosed in which at least one resistive switching element is interposed between at least a first and a second conducting electrode element. The resistive switching element comprises a metal oxynitride. A method for making such a resistive switching element is also disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {10}
}

Patent:

Save / Share:

Works referenced in this record: