Lattice-mismatched GaInP LED devices and methods of fabricating same
Abstract
A method (100) of fabricating an LED or the active regions of an LED and an LED (200). The method includes growing, depositing or otherwise providing a bottom cladding layer (208) of a selected semiconductor alloy with an adjusted bandgap provided by intentionally disordering the structure of the cladding layer (208). A first active layer (202) may be grown above the bottom cladding layer (208) wherein the first active layer (202) is fabricated of the same semiconductor alloy, with however, a partially ordered structure. The first active layer (202) will also be fabricated to include a selected n or p type doping. The method further includes growing a second active layer (204) above the first active layer (202) where the second active layer (204) Is fabricated from the same semiconductor alloy.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1160241
- Patent Number(s):
- 8866146
- Application Number:
- 13/262,509
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC36-08G028308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2010 Apr 15
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Mascarenhas, Angelo, Steiner, Myles A, Bhusal, Lekhnath, and Zhang, Yong. Lattice-mismatched GaInP LED devices and methods of fabricating same. United States: N. p., 2014.
Web.
Mascarenhas, Angelo, Steiner, Myles A, Bhusal, Lekhnath, & Zhang, Yong. Lattice-mismatched GaInP LED devices and methods of fabricating same. United States.
Mascarenhas, Angelo, Steiner, Myles A, Bhusal, Lekhnath, and Zhang, Yong. Tue .
"Lattice-mismatched GaInP LED devices and methods of fabricating same". United States. https://www.osti.gov/servlets/purl/1160241.
@article{osti_1160241,
title = {Lattice-mismatched GaInP LED devices and methods of fabricating same},
author = {Mascarenhas, Angelo and Steiner, Myles A and Bhusal, Lekhnath and Zhang, Yong},
abstractNote = {A method (100) of fabricating an LED or the active regions of an LED and an LED (200). The method includes growing, depositing or otherwise providing a bottom cladding layer (208) of a selected semiconductor alloy with an adjusted bandgap provided by intentionally disordering the structure of the cladding layer (208). A first active layer (202) may be grown above the bottom cladding layer (208) wherein the first active layer (202) is fabricated of the same semiconductor alloy, with however, a partially ordered structure. The first active layer (202) will also be fabricated to include a selected n or p type doping. The method further includes growing a second active layer (204) above the first active layer (202) where the second active layer (204) Is fabricated from the same semiconductor alloy.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {10}
}
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