skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Lattice-mismatched GaInP LED devices and methods of fabricating same

Abstract

A method (100) of fabricating an LED or the active regions of an LED and an LED (200). The method includes growing, depositing or otherwise providing a bottom cladding layer (208) of a selected semiconductor alloy with an adjusted bandgap provided by intentionally disordering the structure of the cladding layer (208). A first active layer (202) may be grown above the bottom cladding layer (208) wherein the first active layer (202) is fabricated of the same semiconductor alloy, with however, a partially ordered structure. The first active layer (202) will also be fabricated to include a selected n or p type doping. The method further includes growing a second active layer (204) above the first active layer (202) where the second active layer (204) Is fabricated from the same semiconductor alloy.

Inventors:
; ; ;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1160241
Patent Number(s):
8866146
Application Number:
13/262,509
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC36-08G028308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 Apr 15
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Mascarenhas, Angelo, Steiner, Myles A, Bhusal, Lekhnath, and Zhang, Yong. Lattice-mismatched GaInP LED devices and methods of fabricating same. United States: N. p., 2014. Web.
Mascarenhas, Angelo, Steiner, Myles A, Bhusal, Lekhnath, & Zhang, Yong. Lattice-mismatched GaInP LED devices and methods of fabricating same. United States.
Mascarenhas, Angelo, Steiner, Myles A, Bhusal, Lekhnath, and Zhang, Yong. Tue . "Lattice-mismatched GaInP LED devices and methods of fabricating same". United States. https://www.osti.gov/servlets/purl/1160241.
@article{osti_1160241,
title = {Lattice-mismatched GaInP LED devices and methods of fabricating same},
author = {Mascarenhas, Angelo and Steiner, Myles A and Bhusal, Lekhnath and Zhang, Yong},
abstractNote = {A method (100) of fabricating an LED or the active regions of an LED and an LED (200). The method includes growing, depositing or otherwise providing a bottom cladding layer (208) of a selected semiconductor alloy with an adjusted bandgap provided by intentionally disordering the structure of the cladding layer (208). A first active layer (202) may be grown above the bottom cladding layer (208) wherein the first active layer (202) is fabricated of the same semiconductor alloy, with however, a partially ordered structure. The first active layer (202) will also be fabricated to include a selected n or p type doping. The method further includes growing a second active layer (204) above the first active layer (202) where the second active layer (204) Is fabricated from the same semiconductor alloy.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {10}
}

Patent:

Save / Share:

Works referenced in this record:

Characterization survey of GaxIn1−xAs/InAsyP1−y double heterostructures and InAsyP1−y multilayers grown on InP
journal, March 2004


Very high efficiency solar cell modules
journal, January 2009

  • Barnett, Allen; Kirkpatrick, Douglas; Honsberg, Christiana
  • Progress in Photovoltaics: Research and Applications, Vol. 17, Issue 1, p. 75-83
  • https://doi.org/10.1002/pip.852

High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
journal, July 2007


40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
journal, September 2008


Visible light-emitting diodes grown on optimized ∇x[InxGa1−x]P/GaP epitaxial transparent substrates with controlled dislocation density
journal, August 2000


40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells
journal, April 2007


Effect of growth rate on the band gap of Ga0.5In0.5P
journal, October 1990


Disorder/order/disorder Ga0.5In0.5P visible light‐emitting diodes
journal, December 1992


The Physics of Tunable Disorder in Semiconductor Alloys
book, January 2002


A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell
journal, February 1990


Interplay of alloying and ordering on the electronic structure of GaxIn1xP alloys
journal, December 2008


Non-Bloch Nature of Alloy States in a Conventional Semiconductor Alloy GaxIn1xPas an Example
journal, July 2008


Tailoring the electronic properties of GaxIn1−xP beyond simply varying alloy composition
journal, March 2009