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Title: Method of fabricating bifacial tandem solar cells

A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.
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Issue Date:
OSTI Identifier:
Masimo Semiconductor, Inc. (Irvine, CA) NREL
Patent Number(s):
Application Number:
Resource Relation:
Patent File Date: 2010 May 24
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
Country of Publication:
United States

Other works cited in this record:

Controlled reflectance solar cell
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Substrate structures for InP-based devices

Monolithic tandem solar cell
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Monolithic tandem solar cell
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Bilayer passivation structure for photovoltaic cells
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Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge
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Voltage-matched, monolithic, multi-band-gap devices
patent, August 2006

Isoelectronic surfactant induced sublattice disordering in optoelectronic devices
patent-application, March 2007

40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
journal, September 2008
  • Geisz, J. F.; Friedman, D. J.; Ward, J. S.
  • Applied Physics Letters, Vol. 93, Issue 12, Article No. 123505
  • DOI: 10.1063/1.2988497

A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell
journal, February 1990
  • Olson, J. M.; Kurtz, S. R.; Kibbler, A. E.
  • Applied Physics Letters, Vol. 56, Issue 7, p. 623-625
  • DOI: 10.1063/1.102717

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