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Title: Method of fabricating bifacial tandem solar cells

Abstract

A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1160138
Patent Number(s):
8,852,994
Application Number:
12/800,824
Assignee:
Masimo Semiconductor, Inc. (Irvine, CA)
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 May 24
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Wojtczuk, Steven J, Chiu, Philip T, Zhang, Xuebing, Gagnon, Edward, and Timmons, Michael. Method of fabricating bifacial tandem solar cells. United States: N. p., 2014. Web.
Wojtczuk, Steven J, Chiu, Philip T, Zhang, Xuebing, Gagnon, Edward, & Timmons, Michael. Method of fabricating bifacial tandem solar cells. United States.
Wojtczuk, Steven J, Chiu, Philip T, Zhang, Xuebing, Gagnon, Edward, and Timmons, Michael. Tue . "Method of fabricating bifacial tandem solar cells". United States. https://www.osti.gov/servlets/purl/1160138.
@article{osti_1160138,
title = {Method of fabricating bifacial tandem solar cells},
author = {Wojtczuk, Steven J and Chiu, Philip T and Zhang, Xuebing and Gagnon, Edward and Timmons, Michael},
abstractNote = {A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {10}
}

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