High throughput solar cell ablation system

Harley, Gabriel; Pass, Thomas; Cousins, Peter John; Viatella, John

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Title: High throughput solar cell ablation system

Abstract

A solar cell is formed using a solar cell ablation system. The ablation system includes a single laser source and several laser scanners. The laser scanners include a master laser scanner, with the rest of the laser scanners being slaved to the master laser scanner. A laser beam from the laser source is split into several laser beams, with the laser beams being scanned onto corresponding wafers using the laser scanners in accordance with one or more patterns. The laser beams may be scanned on the wafers using the same or different power levels of the laser source.

Inventors:: Harley, Gabriel; Pass, Thomas; Cousins, Peter John; Viatella, John

Issue Date:: 2014-10-14

Research Org.:: SunPower Corporation, San Jose, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1160130

Patent Number(s):: 8859933

Application Number:: 13/584,613

Assignee:: SunPower Corporation (San Jose, CA)

Patent Classifications (CPCs):: B - PERFORMING OPERATIONS B23 - MACHINE TOOLS B23K - SOLDERING OR UNSOLDERING

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B23 - MACHINE TOOLS B23K - SOLDERING OR UNSOLDERING
B23K2103/50 - {Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26}
B23K26/067 - Dividing the beam into multiple beams, e.g. multifocusing
B23K26/082 - Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
B23K26/0823 - {Devices involving rotation of the workpiece}
B23K26/40 - taking account of the properties of the material involved

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/02168 - {the coatings being antireflective or having enhancing optical properties for the solar cells}
H01L31/022441 - {Electrode arrangements specially adapted for back-contact solar cells}
H01L31/0682 - {back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells}
H01L31/18 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
H01L31/202 - {including only elements of Group IV of the Periodic System}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/52 - PV systems with concentrators
Y02E10/547 - Monocrystalline silicon PV cells

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DOE Contract Number:: FC36-07GO17043

Resource Type:: Patent

Resource Relation:: Patent File Date: 2012 Aug 13

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY

Citation Formats


                    Harley, Gabriel, Pass, Thomas, Cousins, Peter John, and Viatella, John. High throughput solar cell ablation system.  United States: N. p., 2014. 
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                    Harley, Gabriel, Pass, Thomas, Cousins, Peter John, & Viatella, John. High throughput solar cell ablation system.  United States.

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                    Harley, Gabriel, Pass, Thomas, Cousins, Peter John, and Viatella, John. Tue .  
        "High throughput solar cell ablation system".  United States.  https://www.osti.gov/servlets/purl/1160130.

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@article{osti_1160130,

  title        = {High throughput solar cell ablation system},

  author       = {Harley, Gabriel and Pass, Thomas and Cousins, Peter John and Viatella, John},

  abstractNote = {A solar cell is formed using a solar cell ablation system. The ablation system includes a single laser source and several laser scanners. The laser scanners include a master laser scanner, with the rest of the laser scanners being slaved to the master laser scanner. A laser beam from the laser source is split into several laser beams, with the laser beams being scanned onto corresponding wafers using the laser scanners in accordance with one or more patterns. The laser beams may be scanned on the wafers using the same or different power levels of the laser source.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2014},

  month        = {10}

}

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