High speed low loss gate drive circuit
Abstract
A gate drive circuit includes an insulated gate semiconductor switch. A controlled current source is connected to the semiconductor switch gate terminal to provide a gate drive circuit that is responsive to recycled gate charge corresponding to an internal gate capacitance of the insulated gate semiconductor switch.
- Inventors:
- Issue Date:
- Research Org.:
- General Electric Company, Niskayuna, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1159924
- Patent Number(s):
- 8,847,631
- Application Number:
- 13/336,669
- Assignee:
- General Electric Company (Niskayuna, NY)
- DOE Contract Number:
- FC26-08NT05868
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Tao, Fengfeng, Saddoughi, Seyed Gholamali, and Herbon, John Thomas. High speed low loss gate drive circuit. United States: N. p., 2014.
Web.
Tao, Fengfeng, Saddoughi, Seyed Gholamali, & Herbon, John Thomas. High speed low loss gate drive circuit. United States.
Tao, Fengfeng, Saddoughi, Seyed Gholamali, and Herbon, John Thomas. Tue .
"High speed low loss gate drive circuit". United States. https://www.osti.gov/servlets/purl/1159924.
@article{osti_1159924,
title = {High speed low loss gate drive circuit},
author = {Tao, Fengfeng and Saddoughi, Seyed Gholamali and Herbon, John Thomas},
abstractNote = {A gate drive circuit includes an insulated gate semiconductor switch. A controlled current source is connected to the semiconductor switch gate terminal to provide a gate drive circuit that is responsive to recycled gate charge corresponding to an internal gate capacitance of the insulated gate semiconductor switch.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {9}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Adaptive gate drive voltage circuit
patent-application, February 2006
- Ahmad, Faisal
- US Patent Application 11/207507; 20060038547
Resonant gate drive circuits
patent-application, August 2006
- Liu, Yan-Fei; Yang, Zhihua; Eberle, Wilson
- US Patent Application 11/266486; 20060170043
Gate drive circuit, semiconductor module and method for driving switching element
patent-application, August 2006
- Kojima, Tsutomu
- US Patent Application 11/337612; 20060181831
High Frequency Power MESFET Gate Drive Circuits
patent-application, June 2007
- Williams, Richard K.
- US Patent Application 11/307199;20070146020
Gate Drive Circuit
patent-application, May 2008
- Ishikawa, Katsumi; Nagasu, Masahiro; Tsugawa, Dai
- US Patent Application 12/019032; 20080122497
High Voltage Drive Circuit Employing Capacitive Signal Coupling and Associated Devices and Methods
patent-application, August 2009
- Ng, Gek Yong; Chow, Fun Kok; Lum, Richard Kok Keong
- US Patent Application 12/163275; 20090206817
MOSFET gate drive with reduced power loss
patent-application, January 2011
- Williams, Richard K.
- US Patent Application 12/924164; 20110018593
Switching Circuit for Series Configuration of IGBT Transistors
patent-application, August 2011
- Gollentz, Bernard
- US Patent Application 12/297774; 20110204835
Design Consideration of High Power Density Inverter with Low-on-voltage SiC-JBS and High-speed Gate Driving of Si-IGBT
conference, February 2009
- Takao, K.; Ota, C.; Nishio, J.
- 2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)