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Title: High speed low loss gate drive circuit

Abstract

A gate drive circuit includes an insulated gate semiconductor switch. A controlled current source is connected to the semiconductor switch gate terminal to provide a gate drive circuit that is responsive to recycled gate charge corresponding to an internal gate capacitance of the insulated gate semiconductor switch.

Inventors:
; ;
Issue Date:
Research Org.:
General Electric Company, Niskayuna, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1159924
Patent Number(s):
8,847,631
Application Number:
13/336,669
Assignee:
General Electric Company (Niskayuna, NY) NETL
DOE Contract Number:  
FC26-08NT05868
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Tao, Fengfeng, Saddoughi, Seyed Gholamali, and Herbon, John Thomas. High speed low loss gate drive circuit. United States: N. p., 2014. Web.
Tao, Fengfeng, Saddoughi, Seyed Gholamali, & Herbon, John Thomas. High speed low loss gate drive circuit. United States.
Tao, Fengfeng, Saddoughi, Seyed Gholamali, and Herbon, John Thomas. Tue . "High speed low loss gate drive circuit". United States. https://www.osti.gov/servlets/purl/1159924.
@article{osti_1159924,
title = {High speed low loss gate drive circuit},
author = {Tao, Fengfeng and Saddoughi, Seyed Gholamali and Herbon, John Thomas},
abstractNote = {A gate drive circuit includes an insulated gate semiconductor switch. A controlled current source is connected to the semiconductor switch gate terminal to provide a gate drive circuit that is responsive to recycled gate charge corresponding to an internal gate capacitance of the insulated gate semiconductor switch.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {9}
}

Patent:

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