High speed low loss gate drive circuit
Abstract
A gate drive circuit includes an insulated gate semiconductor switch. A controlled current source is connected to the semiconductor switch gate terminal to provide a gate drive circuit that is responsive to recycled gate charge corresponding to an internal gate capacitance of the insulated gate semiconductor switch.
- Inventors:
- Issue Date:
- Research Org.:
- GE Global Research, Niskayuna, New York (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1159924
- Patent Number(s):
- 8847631
- Application Number:
- 13/336,669
- Assignee:
- General Electric Company (Niskayuna, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H03 - BASIC ELECTRONIC CIRCUITRY H03K - PULSE TECHNIQUE
- DOE Contract Number:
- FC26-08NT05868
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Tao, Fengfeng, Saddoughi, Seyed Gholamali, and Herbon, John Thomas. High speed low loss gate drive circuit. United States: N. p., 2014.
Web.
Tao, Fengfeng, Saddoughi, Seyed Gholamali, & Herbon, John Thomas. High speed low loss gate drive circuit. United States.
Tao, Fengfeng, Saddoughi, Seyed Gholamali, and Herbon, John Thomas. Tue .
"High speed low loss gate drive circuit". United States. https://www.osti.gov/servlets/purl/1159924.
@article{osti_1159924,
title = {High speed low loss gate drive circuit},
author = {Tao, Fengfeng and Saddoughi, Seyed Gholamali and Herbon, John Thomas},
abstractNote = {A gate drive circuit includes an insulated gate semiconductor switch. A controlled current source is connected to the semiconductor switch gate terminal to provide a gate drive circuit that is responsive to recycled gate charge corresponding to an internal gate capacitance of the insulated gate semiconductor switch.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {9}
}
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