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Title: Organic spintronic devices and methods for making the same

Abstract

An organic spintronic photovoltaic device (100) having an organic electron active layer (102) functionally associated with a pair of electrodes (104, 106). The organic electron active layer (102) can include a spin active molecular radical distributed in the active layer (102) which increases spin-lattice relaxation rates within the active layer (102). The increased spin lattice relaxation rate can also influence the efficiency of OLED and charge mobility in FET devices.

Inventors:
;
Issue Date:
Research Org.:
University of Utah Research Foundation, Salt Lake City, UT (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1159900
Patent Number(s):
8841549
Application Number:
13/123,493
Assignee:
University of Utah Research Foundation (Salt Lake City, UT)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Vardeny, Zee Valentine, and Ndobe, Alex. Organic spintronic devices and methods for making the same. United States: N. p., 2014. Web.
Vardeny, Zee Valentine, & Ndobe, Alex. Organic spintronic devices and methods for making the same. United States.
Vardeny, Zee Valentine, and Ndobe, Alex. Tue . "Organic spintronic devices and methods for making the same". United States. https://www.osti.gov/servlets/purl/1159900.
@article{osti_1159900,
title = {Organic spintronic devices and methods for making the same},
author = {Vardeny, Zee Valentine and Ndobe, Alex},
abstractNote = {An organic spintronic photovoltaic device (100) having an organic electron active layer (102) functionally associated with a pair of electrodes (104, 106). The organic electron active layer (102) can include a spin active molecular radical distributed in the active layer (102) which increases spin-lattice relaxation rates within the active layer (102). The increased spin lattice relaxation rate can also influence the efficiency of OLED and charge mobility in FET devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {9}
}

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Works referenced in this record:

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