DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method of lift-off patterning thin films in situ employing phase change resists

Abstract

Method for making a patterned thin film of an organic semiconductor. The method includes condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation point of the resist gas. The condensed solid film is heated selectively with a patterned stamp to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film. An organic semiconductor film is coated on the patterned resist film and the patterned resist film is heated to cause it to sublime away and to lift off because of the phase change.

Inventors:
; ;
Issue Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1159897
Patent Number(s):
8841152
Application Number:
13/465,065
Assignee:
Massachusetts Institute of Technology (Cambridge, MA)
DOE Contract Number:  
SC00G1088
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Bahlke, Matthias Erhard, Baldo, Marc A, and Mendoza, Hiroshi Antonio. Method of lift-off patterning thin films in situ employing phase change resists. United States: N. p., 2014. Web.
Bahlke, Matthias Erhard, Baldo, Marc A, & Mendoza, Hiroshi Antonio. Method of lift-off patterning thin films in situ employing phase change resists. United States.
Bahlke, Matthias Erhard, Baldo, Marc A, and Mendoza, Hiroshi Antonio. Tue . "Method of lift-off patterning thin films in situ employing phase change resists". United States. https://www.osti.gov/servlets/purl/1159897.
@article{osti_1159897,
title = {Method of lift-off patterning thin films in situ employing phase change resists},
author = {Bahlke, Matthias Erhard and Baldo, Marc A and Mendoza, Hiroshi Antonio},
abstractNote = {Method for making a patterned thin film of an organic semiconductor. The method includes condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation point of the resist gas. The condensed solid film is heated selectively with a patterned stamp to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film. An organic semiconductor film is coated on the patterned resist film and the patterned resist film is heated to cause it to sublime away and to lift off because of the phase change.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 23 00:00:00 EDT 2014},
month = {Tue Sep 23 00:00:00 EDT 2014}
}

Works referenced in this record:

Dry process for the production of microelectronic devices
patent, September 1982


Melt-based patterning for electronic devices
patent, October 2007


Lift-off positive resist composition
patent, January 2008


Method for manufacturing a patterned structure
patent, July 2010


Exposure apparatus and laser working method
patent-application, September 2001


Electroluminescent materials and methods of manufacture and use
patent-application, December 2003


Melt-based patterning for electronic devices
patent-application, January 2005


Organic light emitting device
patent-application, April 2006


Frequency Doubling using a Photo-Resist Template Mask
patent-application, April 2009


Lift-off patterning processes employing energetically-stimulated local removal of solid-condensed-gas layers
patent-application, July 2009


Method and Apparatus for Light Absorption and Charged Carrier Transport
patent-application, July 2010


Method of Fabricating Organic Light Emitting Diode Display
patent-application, May 2011


    Works referencing / citing this record:

    Method of lift-off patterning thin films in situ employing phase change resists
    patent, September 2014