Global to push GA events into
skip to main content

Title: ZnO buffer layer for metal films on silicon substrates

Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.
Inventors:
Issue Date:
OSTI Identifier:
1159829
Assignee:
Sandia Corporation (Albuquerque, NM) SSO
Patent Number(s):
8,835,023
Application Number:
13/584,641
Contract Number:
AC04-94AL85000
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Other works cited in this record:

Control of the morphology of CSD-prepared (Ba,Sr)TiO3 thin films
journal, June 1999

Similar records in DOepatents and OSTI.GOV collections: