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Title: Passive electrically switchable circuit element having improved tunability and method for its manufacture

Abstract

A resistive switching device and methods for making the same are disclosed. In the above said device, a resistive switching layer is interposed between opposing electrodes. The resistive switching layer comprises at least two sub-layers of switchable insulative material characterized by different ionic mobilities.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1159647
Patent Number(s):
8,835,272
Application Number:
13/780,262
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Mickel, Patrick R, and James, Conrad D. Passive electrically switchable circuit element having improved tunability and method for its manufacture. United States: N. p., 2014. Web.
Mickel, Patrick R, & James, Conrad D. Passive electrically switchable circuit element having improved tunability and method for its manufacture. United States.
Mickel, Patrick R, and James, Conrad D. Tue . "Passive electrically switchable circuit element having improved tunability and method for its manufacture". United States. https://www.osti.gov/servlets/purl/1159647.
@article{osti_1159647,
title = {Passive electrically switchable circuit element having improved tunability and method for its manufacture},
author = {Mickel, Patrick R and James, Conrad D},
abstractNote = {A resistive switching device and methods for making the same are disclosed. In the above said device, a resistive switching layer is interposed between opposing electrodes. The resistive switching layer comprises at least two sub-layers of switchable insulative material characterized by different ionic mobilities.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {9}
}

Patent:

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Works referenced in this record:

Memristive devices and systems
journal, January 1976


Memristor-The missing circuit element
journal, January 1971


Nanoscale Memristor Device as Synapse in Neuromorphic Systems
journal, April 2010

  • Jo, Sung Hyun; Chang, Ting; Ebong, Idongesit
  • Nano Letters, Vol. 10, Issue 4, p. 1297-1301
  • DOI: 10.1021/nl904092h

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
journal, January 2010

  • Kwon, Deok-Hwang; Kim, Kyung Min; Jang, Jae Hyuck
  • Nature Nanotechnology, Vol. 5, Issue 2
  • DOI: 10.1038/nnano.2009.456

Device and SPICE modeling of RRAM devices
journal, January 2011

  • Sheridan, Patrick; Kim, Kuk-Hwan; Gaba, Siddharth
  • Nanoscale, Vol. 3, Issue 9
  • DOI: 10.1039/C1NR10557D

Exponential ionic drift: fast switching and low volatility of thin-film memristors
journal, November 2008


Nanoionics-based resistive switching memories
journal, November 2007

  • Waser, Rainer; Aono, Masakazu
  • Nature Materials, Vol. 6, Issue 11, p. 833-840
  • DOI: 10.1038/nmat2023

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
journal, July 2009

  • Waser, Rainer; Dittmann, Regina; Staikov, Georgi
  • Advanced Materials, Vol. 21, Issue 25-26, p. 2632-2663
  • DOI: 10.1002/adma.200900375

Memristive switching mechanism for metal/oxide/metal nanodevices
journal, June 2008

  • Yang, J. Joshua; Pickett, Matthew D.; Li, Xuema
  • Nature Nanotechnology, Vol. 3, Issue 7
  • DOI: 10.1038/nnano.2008.160