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Title: Passive electrically switchable circuit element having improved tunability and method for its manufacture

Abstract

A resistive switching device and methods for making the same are disclosed. In the above said device, a resistive switching layer is interposed between opposing electrodes. The resistive switching layer comprises at least two sub-layers of switchable insulative material characterized by different ionic mobilities.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1159647
Patent Number(s):
8835272
Application Number:
13/780,262
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Mickel, Patrick R, and James, Conrad D. Passive electrically switchable circuit element having improved tunability and method for its manufacture. United States: N. p., 2014. Web.
Mickel, Patrick R, & James, Conrad D. Passive electrically switchable circuit element having improved tunability and method for its manufacture. United States.
Mickel, Patrick R, and James, Conrad D. Tue . "Passive electrically switchable circuit element having improved tunability and method for its manufacture". United States. https://www.osti.gov/servlets/purl/1159647.
@article{osti_1159647,
title = {Passive electrically switchable circuit element having improved tunability and method for its manufacture},
author = {Mickel, Patrick R and James, Conrad D},
abstractNote = {A resistive switching device and methods for making the same are disclosed. In the above said device, a resistive switching layer is interposed between opposing electrodes. The resistive switching layer comprises at least two sub-layers of switchable insulative material characterized by different ionic mobilities.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 16 00:00:00 EDT 2014},
month = {Tue Sep 16 00:00:00 EDT 2014}
}

Works referenced in this record:

Solid Memory
patent-application, August 2010


Semiconductor Device and Method for Manufacturing the Same
patent-application, October 2012


Resistance Change Element and Manufacturing Method Therefor
patent-application, May 2013


Nonvolatile Resistive Memory Element With a Metal Nitride Containing Switching Layer
patent-application, June 2013


Memory Cells, Methods of Programming Memory Cells, and Methods of Forming Memory Cells
patent-application, November 2013


Memory Device with In-Bit Current Limiters
patent-application, January 2014


Memristor Cell Structures for High Density Arrays
patent-application, January 2014


Nonvolatile Semiconductor Memory Device and Operating Method of the Same
patent-application, March 2014


Memristive devices and systems
journal, January 1976


Memristor-The missing circuit element
journal, January 1971


Nanoscale Memristor Device as Synapse in Neuromorphic Systems
journal, April 2010


Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
journal, January 2010


Exponential ionic drift: fast switching and low volatility of thin-film memristors
journal, November 2008


Nanoionics-based resistive switching memories
journal, November 2007


Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
journal, July 2009


Memristive switching mechanism for metal/oxide/metal nanodevices
journal, June 2008


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