Gas sensor
Abstract
A gas sensor is described which incorporates a sensor stack comprising a first film layer of a ferromagnetic material, a spacer layer, and a second film layer of the ferromagnetic material. The first film layer is fabricated so that it exhibits a dependence of its magnetic anisotropy direction on the presence of a gas, That is, the orientation of the easy axis of magnetization will flip from out-of-plane to in-plane when the gas to be detected is present in sufficient concentration. By monitoring the change in resistance of the sensor stack when the orientation of the first layer's magnetization changes, and correlating that change with temperature one can determine both the identity and relative concentration of the detected gas. In one embodiment the stack sensor comprises a top ferromagnetic layer two mono layers thick of cobalt deposited upon a spacer layer of ruthenium, which in turn has a second layer of cobalt disposed on its other side, this second cobalt layer in contact with a programmable heater chip.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1158792
- Patent Number(s):
- 8826726
- Application Number:
- 13/318,522
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- DOE Contract Number:
- AC02-05CH11231
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Schmid, Andreas K., Mascaraque, Arantzazu, Santos, Benito, and de la Figuera, Juan. Gas sensor. United States: N. p., 2014.
Web.
Schmid, Andreas K., Mascaraque, Arantzazu, Santos, Benito, & de la Figuera, Juan. Gas sensor. United States.
Schmid, Andreas K., Mascaraque, Arantzazu, Santos, Benito, and de la Figuera, Juan. Tue .
"Gas sensor". United States. https://www.osti.gov/servlets/purl/1158792.
@article{osti_1158792,
title = {Gas sensor},
author = {Schmid, Andreas K. and Mascaraque, Arantzazu and Santos, Benito and de la Figuera, Juan},
abstractNote = {A gas sensor is described which incorporates a sensor stack comprising a first film layer of a ferromagnetic material, a spacer layer, and a second film layer of the ferromagnetic material. The first film layer is fabricated so that it exhibits a dependence of its magnetic anisotropy direction on the presence of a gas, That is, the orientation of the easy axis of magnetization will flip from out-of-plane to in-plane when the gas to be detected is present in sufficient concentration. By monitoring the change in resistance of the sensor stack when the orientation of the first layer's magnetization changes, and correlating that change with temperature one can determine both the identity and relative concentration of the detected gas. In one embodiment the stack sensor comprises a top ferromagnetic layer two mono layers thick of cobalt deposited upon a spacer layer of ruthenium, which in turn has a second layer of cobalt disposed on its other side, this second cobalt layer in contact with a programmable heater chip.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {9}
}
Works referenced in this record:
Tunneling magnetoresistive (TMR) sensor having a barrier layer made of magnesium-oxide (Mg-O)
patent-application, January 2005
- Linn, Tsann; Mauri, Daniele
- US Patent Application 10/900487; 20050009211
Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh
patent-application, December 2005
- Fullerton, Eric Edward; Maat, Stefan; Thiele, Jan-Ulrich
- US Patent Application 10/869315; 20050281081
Device having a structural element with magnetic properties, and method
patent-application, October 2006
- Brandt, Martin S.; Goennenwein, Sebastian T. B.; Graf, Tobias
- US Patent Application 11/334796; 20060240992
Magnetoresistive Sensor Having a Structure for Activating and Deactivating Electrostatic Discharge Prevention Circuitry
patent-application, February 2008
- Albrecht, Thomas Robert; Fontana, Robert E.; Gurney, Bruce Alvin
- US Patent Application 11/426908; 20080037182
Concept for Detecting a Change of a Physical Quantity by Means of a Conductor Structure
patent-application, April 2008
- Zimmer, Juergen
- US Patent Application 11/855293; 20080084205
Electrochemical Gas Sensor Chip and Method of Manufacturing the Same
patent-application, June 2008
- Moon, Seung Eon; Kim, Eun Kyoung; Lee, Hong Yeol
- US Patent Application 11/944232; 20080128285
Reversible H-Induced Switching of the Magnetic Easy Axis in Thin Films
journal, December 2004
- Sander, D.; Pan, W.; Ouazi, S.
- Physical Review Letters, Vol. 93, Issue 24
Structure and morphology of ultrathinCo/Ru(0001) films
journal, March 2007
- Gabaly, Farid El; Puerta, Juan M.; Klein, Christof
- New Journal of Physics, Vol. 9, Issue 3
Imaging Spin-Reorientation Transitions in Consecutive Atomic Co Layers on Ru(0001)
journal, April 2006
- El Gabaly, Farid; Gallego, Silvia; Muñoz, Carmen
- Physical Review Letters, Vol. 96, Issue 14
Hydrogen-induced reversible spin-reorientation transition and magnetic stripe domain phase in bilayer Co on Ru(0001)
journal, April 2012
- Santos, Benito; Gallego, Silvia; Mascaraque, Arantzazu
- Physical Review B, Vol. 85, Issue 13