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Title: Back contact buffer layer for thin-film solar cells

Abstract

A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

Inventors:
;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1157082
Patent Number(s):
8829342
Application Number:
13/515,686
Assignee:
The University of Toledo (Toledo, OH)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Compaan, Alvin D., and Plotnikov, Victor V. Back contact buffer layer for thin-film solar cells. United States: N. p., 2014. Web.
Compaan, Alvin D., & Plotnikov, Victor V. Back contact buffer layer for thin-film solar cells. United States.
Compaan, Alvin D., and Plotnikov, Victor V. Tue . "Back contact buffer layer for thin-film solar cells". United States. https://www.osti.gov/servlets/purl/1157082.
@article{osti_1157082,
title = {Back contact buffer layer for thin-film solar cells},
author = {Compaan, Alvin D. and Plotnikov, Victor V.},
abstractNote = {A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {9}
}

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Works referenced in this record:

Photocell
patent-application, April 2013


High efficiency, magnetron sputtered CdS/CdTe solar cells
journal, December 2004


High efficiency ultra-thin sputtered CdTe solar cells
journal, September 2006


High efficiency 1 micron thick sputtered CdTe solar cells
conference, January 2005


10% efficiency solar cells with 0.5 µm of CdTe
conference, June 2009