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Title: Back contact buffer layer for thin-film solar cells

A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.
Inventors:
;
Issue Date:
OSTI Identifier:
1157082
Assignee:
The University of Toledo (Toledo, OH) NREL
Patent Number(s):
8,829,342
Application Number:
13/515,686
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Works referenced in this record:

High efficiency, magnetron sputtered CdS/CdTe solar cells
journal, December 2004

High efficiency ultra-thin sputtered CdTe solar cells
journal, September 2006
  • Gupta, Akhlesh; Parikh, Viral; Compaan, Alvin D.
  • Solar Energy Materials and Solar Cells, Vol. 90, Issue 15, p. 2263-2271
  • DOI: 10.1016/j.solmat.2006.02.029