Back contact buffer layer for thin-film solar cells

Compaan, Alvin D.; Plotnikov, Victor V.

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Title: Back contact buffer layer for thin-film solar cells

Abstract

A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

Inventors:: Compaan, Alvin D.; Plotnikov, Victor V.

Issue Date:: Tue Sep 09 00:00:00 EDT 2014

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1157082

Patent Number(s):: 8829342

Application Number:: 13/515,686

Assignee:: The University of Toledo (Toledo, OH)

Patent Classifications (CPCs):: B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y20/00 - Nanooptics, e.g. quantum optics or photonic crystals

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/02008 - {for solar cells or solar cell modules}
H01L31/02167 - {for solar cells}
H01L31/022425 - {for solar cells}
H01L31/022441 - {Electrode arrangements specially adapted for back-contact solar cells}
H01L31/0725 - Multiple junction or tandem solar cells
H01L31/073 - comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H01L31/075 - the potential barriers being only of the PIN type
H01L31/076 - Multiple junction or tandem solar cells
H01L31/077 - the devices comprising monocrystalline or polycrystalline materials
H01L31/1828 - {the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/50 - Photovoltaic [PV] energy
Y02E10/543 - Solar cells from Group II-VI materials
Y02E10/547 - Monocrystalline silicon PV cells
Y02E10/548 - Amorphous silicon PV cells

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Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY

Citation Formats


                    Compaan, Alvin D., and Plotnikov, Victor V. Back contact buffer layer for thin-film solar cells.  United States: N. p., 2014. 
        Web.

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                    Compaan, Alvin D., & Plotnikov, Victor V. Back contact buffer layer for thin-film solar cells.  United States.

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                    Compaan, Alvin D., and Plotnikov, Victor V. Tue .  
        "Back contact buffer layer for thin-film solar cells".  United States.  https://www.osti.gov/servlets/purl/1157082.

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@article{osti_1157082,

  title        = {Back contact buffer layer for thin-film solar cells},

  author       = {Compaan, Alvin D. and Plotnikov, Victor V.},

  abstractNote = {A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Sep 09 00:00:00 EDT 2014},

  month        = {Tue Sep 09 00:00:00 EDT 2014}

}

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