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Title: Method and system for reducing device performance degradation of organic devices

Abstract

Methods and systems for reducing the deleterious effects of gate bias stress on the drain current of an organic device, such as an organic thin film transistor, are provided. In a particular aspect, the organic layer of an organic device is illuminated with light having characteristics selected to reduce the gate bias voltage effects on the drain current of the organic device. For instance, the wavelength and intensity of the light are selected to provide a desired recovery of drain current of the organic device. If the characteristics of the light are appropriately matched to the organic device, recovery of the deleterious effects caused by gate bias voltage stress effects on the drain current of the organic device can be achieved. In a particular aspect, the organic device is selectively illuminated with light to operate the organic device in multiple modes of operation.

Inventors:
Issue Date:
Research Org.:
SRS (Savannah River Site (SRS), Aiken, SC (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1154657
Patent Number(s):
8,822,984
Application Number:
13/305,201
Assignee:
Savannah River Nuclear Solutions, LLC (Aiken, SC)
DOE Contract Number:  
AC09-085R22470
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Teague, Lucile C. Method and system for reducing device performance degradation of organic devices. United States: N. p., 2014. Web.
Teague, Lucile C. Method and system for reducing device performance degradation of organic devices. United States.
Teague, Lucile C. Tue . "Method and system for reducing device performance degradation of organic devices". United States. https://www.osti.gov/servlets/purl/1154657.
@article{osti_1154657,
title = {Method and system for reducing device performance degradation of organic devices},
author = {Teague, Lucile C.},
abstractNote = {Methods and systems for reducing the deleterious effects of gate bias stress on the drain current of an organic device, such as an organic thin film transistor, are provided. In a particular aspect, the organic layer of an organic device is illuminated with light having characteristics selected to reduce the gate bias voltage effects on the drain current of the organic device. For instance, the wavelength and intensity of the light are selected to provide a desired recovery of drain current of the organic device. If the characteristics of the light are appropriately matched to the organic device, recovery of the deleterious effects caused by gate bias voltage stress effects on the drain current of the organic device can be achieved. In a particular aspect, the organic device is selectively illuminated with light to operate the organic device in multiple modes of operation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {9}
}

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Works referenced in this record:

Dependence of persistent photocurrent on gate bias in inkjet printed organic thin-film transistor
journal, March 2010

  • Kim, Chang Hyun; Choi, Min Hee; Lee, Sun Hee
  • Applied Physics Letters, Vol. 96, Issue 12
  • DOI: 10.1063/1.3372619

Photoresponsive characteristics and hysteresis of soluble 6,13-bis(triisopropyl-silylethynyl)-pentacene-based organic thin film transistors with and without annealing
journal, February 2010

  • Cho, Mi Yeon; Han, Yoon Deok; Kang, Han Saem
  • Journal of Applied Physics, Vol. 107, Issue 3
  • DOI: 10.1063/1.3277025

Reversible memory effects and acceptor states in pentacene-based organic thin-film transistors
journal, January 2007

  • Gu, Gong; Kane, Michael G.; Mau, Siun-Chuon
  • Journal of Applied Physics, Vol. 101, Issue 1
  • DOI: 10.1063/1.2403241

Multibit Storage of Organic Thin-Film Field-Effect Transistors
journal, May 2009

  • Guo, Yunlong; Di, Chong-an; Ye, Shanghui
  • Advanced Materials, Vol. 21, Issue 19, p. 1954-1959
  • DOI: 10.1002/adma.200802430

Organic Polymer Thin-Film Transistor Photosensors
journal, July 2004

  • Hamilton, M. C.; Kanicki, J.
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 10, Issue 4
  • DOI: 10.1109/JSTQE.2004.833972

Highly sensitive thin-film organic phototransistors: Effect of wavelength of light source on device performance
journal, October 2005

  • Noh, Yong-Young; Kim, Dong-Yu; Yase, Kiyoshi
  • Journal of Applied Physics, Vol. 98, Issue 7
  • DOI: 10.1063/1.2061892

Effect of light irradiation on the characteristics of organic field-effect transistors
journal, November 2006

  • Noh, Yong-Young; Ghim, Jieun; Kang, Seok-Ju
  • Journal of Applied Physics, Vol. 100, Issue 9
  • DOI: 10.1063/1.2364449

Optical, Fluorescent, and (Photo)conductive Properties of High-Performance Functionalized Pentacene and Anthradithiophene Derivatives
journal, July 2009

  • Platt, Andrew D.; Day, Jonathan; Subramanian, Sankar
  • The Journal of Physical Chemistry C, Vol. 113, Issue 31
  • DOI: 10.1021/jp904021p

Threshold Voltage Tuning of Low-Voltage Organic Thin-Film Transistors
journal, July 2011

  • Shang, Liwei; Ji, Zhuoyu; Wang, Hong
  • IEEE Transactions on Electron Devices, Vol. 58, Issue 7
  • DOI: 10.1109/TED.2011.2136436

New Organic Phototransistor With Bias-Modulated Photosensitivity and Bias-Enhanced Memory Effect
journal, July 2009