Method and system for reducing device performance degradation of organic devices
Abstract
Methods and systems for reducing the deleterious effects of gate bias stress on the drain current of an organic device, such as an organic thin film transistor, are provided. In a particular aspect, the organic layer of an organic device is illuminated with light having characteristics selected to reduce the gate bias voltage effects on the drain current of the organic device. For instance, the wavelength and intensity of the light are selected to provide a desired recovery of drain current of the organic device. If the characteristics of the light are appropriately matched to the organic device, recovery of the deleterious effects caused by gate bias voltage stress effects on the drain current of the organic device can be achieved. In a particular aspect, the organic device is selectively illuminated with light to operate the organic device in multiple modes of operation.
- Inventors:
- Issue Date:
- Research Org.:
- SRS (Savannah River Site (SRS), Aiken, SC (United States))
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1154657
- Patent Number(s):
- 8822984
- Application Number:
- 13/305,201
- Assignee:
- Savannah River Nuclear Solutions, LLC (Aiken, SC)
- DOE Contract Number:
- AC09-085R22470
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Teague, Lucile C. Method and system for reducing device performance degradation of organic devices. United States: N. p., 2014.
Web.
Teague, Lucile C. Method and system for reducing device performance degradation of organic devices. United States.
Teague, Lucile C. Tue .
"Method and system for reducing device performance degradation of organic devices". United States. https://www.osti.gov/servlets/purl/1154657.
@article{osti_1154657,
title = {Method and system for reducing device performance degradation of organic devices},
author = {Teague, Lucile C.},
abstractNote = {Methods and systems for reducing the deleterious effects of gate bias stress on the drain current of an organic device, such as an organic thin film transistor, are provided. In a particular aspect, the organic layer of an organic device is illuminated with light having characteristics selected to reduce the gate bias voltage effects on the drain current of the organic device. For instance, the wavelength and intensity of the light are selected to provide a desired recovery of drain current of the organic device. If the characteristics of the light are appropriately matched to the organic device, recovery of the deleterious effects caused by gate bias voltage stress effects on the drain current of the organic device can be achieved. In a particular aspect, the organic device is selectively illuminated with light to operate the organic device in multiple modes of operation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {9}
}
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