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Title: Method and system for reducing device performance degradation of organic devices

Methods and systems for reducing the deleterious effects of gate bias stress on the drain current of an organic device, such as an organic thin film transistor, are provided. In a particular aspect, the organic layer of an organic device is illuminated with light having characteristics selected to reduce the gate bias voltage effects on the drain current of the organic device. For instance, the wavelength and intensity of the light are selected to provide a desired recovery of drain current of the organic device. If the characteristics of the light are appropriately matched to the organic device, recovery of the deleterious effects caused by gate bias voltage stress effects on the drain current of the organic device can be achieved. In a particular aspect, the organic device is selectively illuminated with light to operate the organic device in multiple modes of operation.
Inventors:
Issue Date:
OSTI Identifier:
1154657
Assignee:
Savannah River Nuclear Solutions, LLC (Aiken, SC) SRS
Patent Number(s):
8,822,984
Application Number:
13/305,201
Contract Number:
AC09-085R22470
Research Org:
SRS (Savannah River Site (SRS), Aiken, SC (United States))
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Works referenced in this record:

Multibit Storage of Organic Thin-Film Field-Effect Transistors
journal, May 2009
  • Guo, Yunlong; Di, Chong-an; Ye, Shanghui
  • Advanced Materials, Vol. 21, Issue 19, p. 1954-1959
  • DOI: 10.1002/adma.200802430