Off-axis silicon carbide substrates
Abstract
A method of epitaxial growth of a material on a crystalline substrate includes selecting a substrate having a crystal plane that includes a plurality of terraces with step risers that join adjacent terraces. Each terrace of the plurality or terraces presents a lattice constant that substantially matches a lattice constant of the material, and each step riser presents a step height and offset that is consistent with portions of the material nucleating on adjacent terraces being in substantial crystalline match at the step riser. The method also includes preparing a substrate by exposing the crystal plane; and epitaxially growing the material on the substrate such that the portions of the material nucleating on adjacent terraces merge into a single crystal lattice without defects at the step risers.
- Inventors:
- Issue Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1154656
- Patent Number(s):
- 8823014
- Application Number:
- 12/966,753
- Assignee:
- Kansas State University Research Foundation (Manhattan, KS); State University of New York Stony Brook (Albany, NY); The University of Bristol (Bristol, GB)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-76CH00016; AC02-98CH10886
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Edgar, James, Dudley, Michael, Kuball, Martin, Zhang, Yi, Wang, Guan, Chen, Hui, and Zhang, Yu. Off-axis silicon carbide substrates. United States: N. p., 2014.
Web.
Edgar, James, Dudley, Michael, Kuball, Martin, Zhang, Yi, Wang, Guan, Chen, Hui, & Zhang, Yu. Off-axis silicon carbide substrates. United States.
Edgar, James, Dudley, Michael, Kuball, Martin, Zhang, Yi, Wang, Guan, Chen, Hui, and Zhang, Yu. Tue .
"Off-axis silicon carbide substrates". United States. https://www.osti.gov/servlets/purl/1154656.
@article{osti_1154656,
title = {Off-axis silicon carbide substrates},
author = {Edgar, James and Dudley, Michael and Kuball, Martin and Zhang, Yi and Wang, Guan and Chen, Hui and Zhang, Yu},
abstractNote = {A method of epitaxial growth of a material on a crystalline substrate includes selecting a substrate having a crystal plane that includes a plurality of terraces with step risers that join adjacent terraces. Each terrace of the plurality or terraces presents a lattice constant that substantially matches a lattice constant of the material, and each step riser presents a step height and offset that is consistent with portions of the material nucleating on adjacent terraces being in substantial crystalline match at the step riser. The method also includes preparing a substrate by exposing the crystal plane; and epitaxially growing the material on the substrate such that the portions of the material nucleating on adjacent terraces merge into a single crystal lattice without defects at the step risers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {9}
}
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