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Title: Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode

Abstract

Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1151787
Patent Number(s):
8814622
Application Number:
13/298,448
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Resnick, Paul J., and Langlois, Eric. Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode. United States: N. p., 2014. Web.
Resnick, Paul J., & Langlois, Eric. Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode. United States.
Resnick, Paul J., and Langlois, Eric. Tue . "Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode". United States. https://www.osti.gov/servlets/purl/1151787.
@article{osti_1151787,
title = {Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode},
author = {Resnick, Paul J. and Langlois, Eric},
abstractNote = {Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {8}
}

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