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Title: Environmentally-assisted technique for transferring devices onto non-conventional substrates

Abstract

A device fabrication method includes: (1) providing a growth substrate including a base and an oxide layer disposed over the base; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate.

Inventors:
; ;
Issue Date:
Research Org.:
Leland Stanford Junior University, Palo Alto, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1151764
Patent Number(s):
8,815,707
Application Number:
13/791,214
Assignee:
Board of Trustees of the Leland Stanford Junior University (Palo Alto, CA)
DOE Contract Number:  
SC0001060
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Lee, Chi-Hwan, Kim, Dong Rip, and Zheng, Xiaolin. Environmentally-assisted technique for transferring devices onto non-conventional substrates. United States: N. p., 2014. Web.
Lee, Chi-Hwan, Kim, Dong Rip, & Zheng, Xiaolin. Environmentally-assisted technique for transferring devices onto non-conventional substrates. United States.
Lee, Chi-Hwan, Kim, Dong Rip, and Zheng, Xiaolin. Tue . "Environmentally-assisted technique for transferring devices onto non-conventional substrates". United States. https://www.osti.gov/servlets/purl/1151764.
@article{osti_1151764,
title = {Environmentally-assisted technique for transferring devices onto non-conventional substrates},
author = {Lee, Chi-Hwan and Kim, Dong Rip and Zheng, Xiaolin},
abstractNote = {A device fabrication method includes: (1) providing a growth substrate including a base and an oxide layer disposed over the base; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {8}
}

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Works referenced in this record:

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