Method or forming emitters for a back-contact solar cell

Li, Bo; Cousins, Peter J.; Smith, David D.

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Title: Method or forming emitters for a back-contact solar cell

Abstract

Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.

Inventors:: Li, Bo; Cousins, Peter J.; Smith, David D.

Issue Date:: 2014-08-12

Research Org.:: SunPower Corporation, San Jose, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1150083

Patent Number(s):: 8802486

Application Number:: 13/372,235

Assignee:: SunPower Corporation (San Jose, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/022441 - {Electrode arrangements specially adapted for back-contact solar cells}
H01L31/0682 - {back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells}
H01L31/18 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
H01L31/1804 - {comprising only elements of Group IV of the Periodic System}
H01L31/1864 - {Annealing}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/547 - Monocrystalline silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

Show less

DOE Contract Number:: FC36-07GO17043

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY

Citation Formats


                    Li, Bo, Cousins, Peter J., and Smith, David D. Method or forming emitters for a back-contact solar cell.  United States: N. p., 2014. 
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                    Li, Bo, Cousins, Peter J., & Smith, David D. Method or forming emitters for a back-contact solar cell.  United States.

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                    Li, Bo, Cousins, Peter J., and Smith, David D. Tue .  
        "Method or forming emitters for a back-contact solar cell".  United States.  https://www.osti.gov/servlets/purl/1150083.

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@article{osti_1150083,

  title        = {Method or forming emitters for a back-contact solar cell},

  author       = {Li, Bo and Cousins, Peter J. and Smith, David D.},

  abstractNote = {Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2014},

  month        = {8}

}

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Similar Records in DOE Patents and OSTI.GOV collections:

Method of forming emitters for a back-contact solar cell

Patent Li, Bo; Cousins, Peter J.; Smith, David D.

Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.
Full Text Available
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Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.
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Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.
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Similar Records

Title: Method or forming emitters for a back-contact solar cell

Abstract

Citation Formats

Back side contact solar cell structures and fabrication processes patent-application, July 2007

Solar cell having silicon nano-particle emitter patent, April 2010

Methods of forming multi-doped junctions on a substrate patent, November 2009

Methods for forming composite nanoparticle-metal metallization contacts on a substrate patent, April 2010

Method of forming contacts for a back-contact solar cell patent, July 2013

Trench process and structure for backside contact solar cells with polysilicon doped regions patent, October 2010

Phosphor materials and illumination devices made therefrom patent-application, December 2004

Method for preparing nanoparticle thin films patent, May 2010

Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions patent-application, March 2011

Back Side Contact Solar Cell Structures And Fabrication Processes patent-application, January 2011

Trench process and structure for backside contact solar cells with polysilicon doped regions patent, December 2010

Back Side Contact Solar Cell Structures And Fabrication Processes patent-application, January 2011

Light strips for lighting and backlighting applications patent-application, February 2006

Trench Process And Structure For Backside Contact Solar Cells With Polysilicon Doped Regions patent-application, January 2011

Backside Contact Solar Cell With Formed Polysilicon Doped Regions patent-application, June 2010

Front contact solar cell with formed emitter patent-application, August 2009

Back side contact solar cell structures and fabrication processes patent, April 2012

Methods for optimizing thin film formation with reactive gases patent, August 2009

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Methods of Usinga a set of Silicon Nanoparticles Fluids to control in situ a set of Dopant Diffusion Profiles patent-application, July 2010

Methods for creating a densified group IV semiconductor nanoparticle thin film patent, April 2009

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Preparation of group IV semiconductor nanoparticle materials and dispersions thereof patent, June 2010

Phosphor materials and illumination devices made therefrom patent, October 2007

Junction Formation on Wafer Substrates Using Group IV Nanoparticles patent-application, October 2009

Light-emitting ceiling tile patent-application, December 2004

Stably Passivated Group IV Semiconductor Nanoparticles and Methods and Compositions Thereof patent-application, October 2008

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Methods of forming multi-doped junctions on a substrate
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Trench process and structure for backside contact solar cells with polysilicon doped regions
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Phosphor materials and illumination devices made therefrom
patent-application, December 2004

Method for preparing nanoparticle thin films
patent, May 2010

Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions
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patent-application, January 2011

Trench process and structure for backside contact solar cells with polysilicon doped regions
patent, December 2010

Back Side Contact Solar Cell Structures And Fabrication Processes
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Light strips for lighting and backlighting applications
patent-application, February 2006

Trench Process And Structure For Backside Contact Solar Cells With Polysilicon Doped Regions
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Backside Contact Solar Cell With Formed Polysilicon Doped Regions
patent-application, June 2010

Front contact solar cell with formed emitter
patent-application, August 2009

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Methods for optimizing thin film formation with reactive gases
patent, August 2009

Back side contact solar cell structures and fabrication processes
patent, October 2010

Methods of Usinga a set of Silicon Nanoparticles Fluids to control in situ a set of Dopant Diffusion Profiles
patent-application, July 2010

Methods for creating a densified group IV semiconductor nanoparticle thin film
patent, April 2009

Dopant material for manufacturing solar cells
patent-application, April 2009

Preparation of group IV semiconductor nanoparticle materials and dispersions thereof
patent, June 2010

Phosphor materials and illumination devices made therefrom
patent, October 2007

Junction Formation on Wafer Substrates Using Group IV Nanoparticles
patent-application, October 2009

Light-emitting ceiling tile
patent-application, December 2004

Stably Passivated Group IV Semiconductor Nanoparticles and Methods and Compositions Thereof
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