Title: Nanomembrane structures having mixed crystalline orientations and compositions

Abstract

The present nanomembrane structures include a multilayer film comprising a single-crystalline layer of semiconductor material disposed between two other single-crystalline layers of semiconductor material. A plurality of holes extending through the nanomembrane are at least partially, and preferably entirely, filled with a filler material which is also a semiconductor, but which differs from the nanomembrane semiconductor materials in composition, crystal orientation, or both.

Inventors:

Lagally, Max G.; Scott, Shelley A.; Savage, Donald E.

Issue Date:

2014-08-12

Research Org.:

Wisconsin Alumni Research Foundation, Madison, WI (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1150081

Patent Number(s):

8803195

Application Number:

12/045,263

Assignee:

Wisconsin Alumni Research Foundation (Madison, WI)

Patent Classifications (CPCs):

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B29/06 - Silicon

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/0237 - {Materials}
H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/02433 - {Crystal orientation}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B29/60 - characterised by shape

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02532 - {Silicon, silicon germanium, germanium}
H01L21/02639 - {Preparation of substrate for selective deposition}
H01L21/02516 - {Crystal orientation}
H01L21/0245 - {Silicon, silicon germanium, germanium}

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DOE Contract Number:  

FG02-03ER46028

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE