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Title: Nanomembrane structures having mixed crystalline orientations and compositions

Abstract

The present nanomembrane structures include a multilayer film comprising a single-crystalline layer of semiconductor material disposed between two other single-crystalline layers of semiconductor material. A plurality of holes extending through the nanomembrane are at least partially, and preferably entirely, filled with a filler material which is also a semiconductor, but which differs from the nanomembrane semiconductor materials in composition, crystal orientation, or both.

Inventors:
; ;
Issue Date:
Research Org.:
Wisconsin Alumni Research Foundation, Madison, WI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1150081
Patent Number(s):
8,803,195
Application Number:
12/045,263
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
DOE Contract Number:  
FG02-03ER46028
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lagally, Max G., Scott, Shelley A., and Savage, Donald E. Nanomembrane structures having mixed crystalline orientations and compositions. United States: N. p., 2014. Web.
Lagally, Max G., Scott, Shelley A., & Savage, Donald E. Nanomembrane structures having mixed crystalline orientations and compositions. United States.
Lagally, Max G., Scott, Shelley A., and Savage, Donald E. Tue . "Nanomembrane structures having mixed crystalline orientations and compositions". United States. https://www.osti.gov/servlets/purl/1150081.
@article{osti_1150081,
title = {Nanomembrane structures having mixed crystalline orientations and compositions},
author = {Lagally, Max G. and Scott, Shelley A. and Savage, Donald E.},
abstractNote = {The present nanomembrane structures include a multilayer film comprising a single-crystalline layer of semiconductor material disposed between two other single-crystalline layers of semiconductor material. A plurality of holes extending through the nanomembrane are at least partially, and preferably entirely, filled with a filler material which is also a semiconductor, but which differs from the nanomembrane semiconductor materials in composition, crystal orientation, or both.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {8}
}

Patent:

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