Nanomembrane structures having mixed crystalline orientations and compositions
Abstract
The present nanomembrane structures include a multilayer film comprising a single-crystalline layer of semiconductor material disposed between two other single-crystalline layers of semiconductor material. A plurality of holes extending through the nanomembrane are at least partially, and preferably entirely, filled with a filler material which is also a semiconductor, but which differs from the nanomembrane semiconductor materials in composition, crystal orientation, or both.
- Inventors:
- Issue Date:
- Research Org.:
- Wisconsin Alumni Research Foundation, Madison, WI (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1150081
- Patent Number(s):
- 8803195
- Application Number:
- 12/045,263
- Assignee:
- Wisconsin Alumni Research Foundation (Madison, WI)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG02-03ER46028
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Lagally, Max G., Scott, Shelley A., and Savage, Donald E. Nanomembrane structures having mixed crystalline orientations and compositions. United States: N. p., 2014.
Web.
Lagally, Max G., Scott, Shelley A., & Savage, Donald E. Nanomembrane structures having mixed crystalline orientations and compositions. United States.
Lagally, Max G., Scott, Shelley A., and Savage, Donald E. Tue .
"Nanomembrane structures having mixed crystalline orientations and compositions". United States. https://www.osti.gov/servlets/purl/1150081.
@article{osti_1150081,
title = {Nanomembrane structures having mixed crystalline orientations and compositions},
author = {Lagally, Max G. and Scott, Shelley A. and Savage, Donald E.},
abstractNote = {The present nanomembrane structures include a multilayer film comprising a single-crystalline layer of semiconductor material disposed between two other single-crystalline layers of semiconductor material. A plurality of holes extending through the nanomembrane are at least partially, and preferably entirely, filled with a filler material which is also a semiconductor, but which differs from the nanomembrane semiconductor materials in composition, crystal orientation, or both.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {8}
}
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