Room-temperature magnetoelectric multiferroic thin films and applications thereof
Abstract
The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.
- Inventors:
- Issue Date:
- Research Org.:
- University of Puerto Rico, San Juan, PR
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1150080
- Patent Number(s):
- 8803264
- Application Number:
- 13/118,275
- Assignee:
- University of Puerto Rico (San Juan, PR)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG02-08ER46526
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Katiyar, Ram S, Kuman, Ashok, and Scott, James F. Room-temperature magnetoelectric multiferroic thin films and applications thereof. United States: N. p., 2014.
Web.
Katiyar, Ram S, Kuman, Ashok, & Scott, James F. Room-temperature magnetoelectric multiferroic thin films and applications thereof. United States.
Katiyar, Ram S, Kuman, Ashok, and Scott, James F. Tue .
"Room-temperature magnetoelectric multiferroic thin films and applications thereof". United States. https://www.osti.gov/servlets/purl/1150080.
@article{osti_1150080,
title = {Room-temperature magnetoelectric multiferroic thin films and applications thereof},
author = {Katiyar, Ram S and Kuman, Ashok and Scott, James F.},
abstractNote = {The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {8}
}