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Title: Room-temperature magnetoelectric multiferroic thin films and applications thereof

Abstract

The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.

Inventors:
; ;
Issue Date:
Research Org.:
University of Puerto Rico, San Juan, PR
Sponsoring Org.:
USDOE
OSTI Identifier:
1150080
Patent Number(s):
8,803,264
Application Number:
13/118,275
Assignee:
University of Puerto Rico (San Juan, PR)
DOE Contract Number:  
FG02-08ER46526
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Katiyar, Ram S, Kuman, Ashok, and Scott, James F. Room-temperature magnetoelectric multiferroic thin films and applications thereof. United States: N. p., 2014. Web.
Katiyar, Ram S, Kuman, Ashok, & Scott, James F. Room-temperature magnetoelectric multiferroic thin films and applications thereof. United States.
Katiyar, Ram S, Kuman, Ashok, and Scott, James F. Tue . "Room-temperature magnetoelectric multiferroic thin films and applications thereof". United States. https://www.osti.gov/servlets/purl/1150080.
@article{osti_1150080,
title = {Room-temperature magnetoelectric multiferroic thin films and applications thereof},
author = {Katiyar, Ram S and Kuman, Ashok and Scott, James F.},
abstractNote = {The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {8}
}

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