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Title: Method of fabricating a back-contact solar cell and device thereof

Abstract

Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

Inventors:
; ;
Issue Date:
Research Org.:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1149917
Patent Number(s):
8790957
Application Number:
12/972,247
Assignee:
SunPower Corporation (San Jose, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
FC36-07GO17043
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 Dec 17
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Li, Bo, Smith, David, and Cousins, Peter. Method of fabricating a back-contact solar cell and device thereof. United States: N. p., 2014. Web.
Li, Bo, Smith, David, & Cousins, Peter. Method of fabricating a back-contact solar cell and device thereof. United States.
Li, Bo, Smith, David, and Cousins, Peter. Tue . "Method of fabricating a back-contact solar cell and device thereof". United States. https://www.osti.gov/servlets/purl/1149917.
@article{osti_1149917,
title = {Method of fabricating a back-contact solar cell and device thereof},
author = {Li, Bo and Smith, David and Cousins, Peter},
abstractNote = {Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 29 00:00:00 EDT 2014},
month = {Tue Jul 29 00:00:00 EDT 2014}
}

Works referenced in this record:

Back side contact solar cell structures and fabrication processes
patent-application, July 2007


Mono-Silicon Solar Cells
patent-application, February 2010


Method of fabricating polysilicon emitters for solar cells
patent, October 1991


Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions
patent-application, December 2009


Extrusion/dispensing systems and methods
patent-application, May 2007


Solar Cell Having Doped Semiconductor Heterojunction Contacts
patent-application, November 2007


Solar cell
patent-application, October 2007


Solar Cell Fabrication Using Extruded Dopant-Bearing Materials
patent-application, June 2008


Mono-silicon solar cells
patent, January 2013