Amber light-emitting diode comprising a group III-nitride nanowire active region
Abstract
A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1149612
- Patent Number(s):
- 8785905
- Application Number:
- 13/743,438
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Jan 17
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
Citation Formats
Wang, George T., Li, Qiming, Wierer, Jr., Jonathan J., and Koleske, Daniel. Amber light-emitting diode comprising a group III-nitride nanowire active region. United States: N. p., 2014.
Web.
Wang, George T., Li, Qiming, Wierer, Jr., Jonathan J., & Koleske, Daniel. Amber light-emitting diode comprising a group III-nitride nanowire active region. United States.
Wang, George T., Li, Qiming, Wierer, Jr., Jonathan J., and Koleske, Daniel. Tue .
"Amber light-emitting diode comprising a group III-nitride nanowire active region". United States. https://www.osti.gov/servlets/purl/1149612.
@article{osti_1149612,
title = {Amber light-emitting diode comprising a group III-nitride nanowire active region},
author = {Wang, George T. and Li, Qiming and Wierer, Jr., Jonathan J. and Koleske, Daniel},
abstractNote = {A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 22 00:00:00 EDT 2014},
month = {Tue Jul 22 00:00:00 EDT 2014}
}
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Works referencing / citing this record:
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