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Title: Amber light-emitting diode comprising a group III-nitride nanowire active region

Abstract

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Inventors:
; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1149612
Patent Number(s):
8,785,905
Application Number:
13/743,438
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Jan 17
Country of Publication:
United States
Language:
English
Subject:
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION

Citation Formats

Wang, George T., Li, Qiming, Wierer, Jr., Jonathan J., and Koleske, Daniel. Amber light-emitting diode comprising a group III-nitride nanowire active region. United States: N. p., 2014. Web.
Wang, George T., Li, Qiming, Wierer, Jr., Jonathan J., & Koleske, Daniel. Amber light-emitting diode comprising a group III-nitride nanowire active region. United States.
Wang, George T., Li, Qiming, Wierer, Jr., Jonathan J., and Koleske, Daniel. Tue . "Amber light-emitting diode comprising a group III-nitride nanowire active region". United States. https://www.osti.gov/servlets/purl/1149612.
@article{osti_1149612,
title = {Amber light-emitting diode comprising a group III-nitride nanowire active region},
author = {Wang, George T. and Li, Qiming and Wierer, Jr., Jonathan J. and Koleske, Daniel},
abstractNote = {A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {7}
}

Patent:

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Works referenced in this record:

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