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Title: Methods for improved growth of group III nitride buffer layers

Abstract

Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

Inventors:
; ;
Issue Date:
Research Org.:
NETL (National Energy Technology Laboratory, Pittsburgh, PA, and Morgantown, WV (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1143685
Patent Number(s):
8,778,783
Application Number:
13/469,050
Assignee:
Applied Materials, Inc. (Santa Clara, CA)
DOE Contract Number:  
EE0003331
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Melnik, Yurity, Chen, Lu, and Kojiri, Hidehiro. Methods for improved growth of group III nitride buffer layers. United States: N. p., 2014. Web.
Melnik, Yurity, Chen, Lu, & Kojiri, Hidehiro. Methods for improved growth of group III nitride buffer layers. United States.
Melnik, Yurity, Chen, Lu, and Kojiri, Hidehiro. Tue . "Methods for improved growth of group III nitride buffer layers". United States. https://www.osti.gov/servlets/purl/1143685.
@article{osti_1143685,
title = {Methods for improved growth of group III nitride buffer layers},
author = {Melnik, Yurity and Chen, Lu and Kojiri, Hidehiro},
abstractNote = {Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {7}
}

Patent:

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