Title: Methods for improved growth of group III nitride buffer layers

Abstract

Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

Inventors:

Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

Issue Date:

2014-07-15

Research Org.:

National Energy Technology Laboratory (NETL), Pittsburgh, PA, Morgantown, WV (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1143685

Patent Number(s):

8778783

Application Number:

13/469,050

Assignee:

Applied Materials, Inc. (Santa Clara, CA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02304 - {formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers}
H01L29/2003 - {Nitride compounds}
H01L21/02505 - {consisting of more than two layers}
H01L29/872 - Schottky diodes
H01L21/0242 - {Crystalline insulating materials}
H01L21/0254 - {Nitrides}
H01L21/02458 - {Nitrides}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}

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DOE Contract Number:  

EE0003331

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY