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Title: Method of forming contacts for a back-contact solar cell

Abstract

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

Inventors:
Issue Date:
Research Org.:
SunPower Corporation, San Jose, CA (USA)
Sponsoring Org.:
USDOE
OSTI Identifier:
1143683
Patent Number(s):
8,778,787
Application Number:
13/930,078
Assignee:
SunPower Corporation (San Jose, CA)
DOE Contract Number:  
FC36-07G017043
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Manning, Jane. Method of forming contacts for a back-contact solar cell. United States: N. p., 2014. Web.
Manning, Jane. Method of forming contacts for a back-contact solar cell. United States.
Manning, Jane. Tue . "Method of forming contacts for a back-contact solar cell". United States. https://www.osti.gov/servlets/purl/1143683.
@article{osti_1143683,
title = {Method of forming contacts for a back-contact solar cell},
author = {Manning, Jane},
abstractNote = {Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {7}
}

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