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Title: Plasmon absorption modulator systems and methods

Plasmon absorption modulator systems and methods are disclosed. A plasmon absorption modulator system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and a metal layer formed on a top surface of the stack of quantum well layers. A method for modulating plasmonic current includes enabling propagation of the plasmonic current along a metal layer, and applying a voltage across the stack of quantum well layers to cause absorption of a portion of energy of the plasmonic current by the stack of quantum well layers. A metamaterial switching system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and at least one metamaterial structure formed on a top surface of the stack of quantum well layers.
Inventors:
;
Issue Date:
OSTI Identifier:
1143679
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
Patent Number(s):
8,780,431
Application Number:
13/364,832
Contract Number:
AC04-94AL85000
Research Org:
SNL (Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States))
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Other works cited in this record:

Plasmonics: the next chip-scale technology
journal, July 2006

Plasmonics beyond the diffraction limit
journal, January 2010
  • Gramotnev, Dmitri K.; Bozhevolnyi, Sergey I.
  • Nature Photonics, Vol. 4, Issue 2, p. 83-91
  • DOI: 10.1038/nphoton.2009.282

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