High performance, high bandgap, lattice-mismatched, GaInP solar cells

Wanlass, Mark W.; Carapella, Jeffrey J.; Steiner, Myles A.

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Title: High performance, high bandgap, lattice-mismatched, GaInP solar cells

Abstract

High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.

Inventors:: Wanlass, Mark W.; Carapella, Jeffrey J.; Steiner, Myles A.

Issue Date:: 2014-07-08

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1137112

Patent Number(s):: 8772628

Application Number:: 12/992,871

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/02168 - {the coatings being antireflective or having enhancing optical properties for the solar cells}
H01L31/022425 - {for solar cells}
H01L31/032 - including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
H01L31/065 - the potential barriers being only of the graded gap type
H01L31/068 - the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L31/06875 - {inverted grown metamorphic [IMM] multiple junction solar cells, e.g. III-V compounds inverted metamorphic multi-junction cells}
H01L31/0693 - the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L31/1844 - {comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P}
H01L31/1892 - {methods involving the use of temporary, removable substrates}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/544 - Solar cells from Group III-V materials
Y02E10/547 - Monocrystalline silicon PV cells

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DOE Contract Number:: AC36-08GO28308

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY

Citation Formats


                    Wanlass, Mark W., Carapella, Jeffrey J., and Steiner, Myles A. High performance, high bandgap, lattice-mismatched, GaInP solar cells.  United States: N. p., 2014. 
        Web.

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                    Wanlass, Mark W., Carapella, Jeffrey J., & Steiner, Myles A. High performance, high bandgap, lattice-mismatched, GaInP solar cells.  United States.

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                    Wanlass, Mark W., Carapella, Jeffrey J., and Steiner, Myles A. Tue .  
        "High performance, high bandgap, lattice-mismatched, GaInP solar cells".  United States.  https://www.osti.gov/servlets/purl/1137112.

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@article{osti_1137112,

  title        = {High performance, high bandgap, lattice-mismatched, GaInP solar cells},

  author       = {Wanlass, Mark W. and Carapella, Jeffrey J. and Steiner, Myles A.},

  abstractNote = {High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2014},

  month        = {7}

}

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