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Title: Electro-chemical sensors, sensor arrays and circuits

Abstract

An electro-chemical sensor includes a first electrode, a second electrode spaced apart from the first electrode, and a semiconductor channel in electrical contact with the first and second electrodes. The semiconductor channel includes a trapping material. The trapping material reduces an ability of the semiconductor channel to conduct a current of charge carriers by trapping at least some of the charge carriers to localized regions within the semiconductor channel. The semiconductor channel includes at least a portion configured to be exposed to an analyte to be detected, and the trapping material, when exposed to the analyte, interacts with the analyte so as to at least partially restore the ability of the semiconductor channel to conduct the current of charge carriers.

Inventors:
;
Issue Date:
Research Org.:
The Johns Hopkins University, Baltimore, MD (USA).
Sponsoring Org.:
USDOE
OSTI Identifier:
1136991
Patent Number(s):
8,772,764
Application Number:
13/725,630
Assignee:
The Johns Hopkins University (Baltimore, MD)
DOE Contract Number:  
FG02-07ER46465
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Katz, Howard E., and Kong, Hoyoul. Electro-chemical sensors, sensor arrays and circuits. United States: N. p., 2014. Web.
Katz, Howard E., & Kong, Hoyoul. Electro-chemical sensors, sensor arrays and circuits. United States.
Katz, Howard E., and Kong, Hoyoul. Tue . "Electro-chemical sensors, sensor arrays and circuits". United States. https://www.osti.gov/servlets/purl/1136991.
@article{osti_1136991,
title = {Electro-chemical sensors, sensor arrays and circuits},
author = {Katz, Howard E. and Kong, Hoyoul},
abstractNote = {An electro-chemical sensor includes a first electrode, a second electrode spaced apart from the first electrode, and a semiconductor channel in electrical contact with the first and second electrodes. The semiconductor channel includes a trapping material. The trapping material reduces an ability of the semiconductor channel to conduct a current of charge carriers by trapping at least some of the charge carriers to localized regions within the semiconductor channel. The semiconductor channel includes at least a portion configured to be exposed to an analyte to be detected, and the trapping material, when exposed to the analyte, interacts with the analyte so as to at least partially restore the ability of the semiconductor channel to conduct the current of charge carriers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {7}
}

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