Removing a sheet from the surface of a melt using elasticity and buoyancy
Abstract
Embodiments related to sheet production are disclosed. A melt of a material is cooled to form a sheet of the material on the melt. The sheet is formed in a first region at a first sheet height. The sheet is translated to a second region such that it has a second sheet height higher than the first sheet height. The sheet is then separated from the melt. A seed wafer may be used to form the sheet.
- Inventors:
- Issue Date:
- Research Org.:
- Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (USA).
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1136751
- Patent Number(s):
- 8764901
- Application Number:
- 13/039,808
- Assignee:
- Varian Semiconductor Equipment Associates, Inc. (Gloucester, MA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- EE0000595
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Kellerman, Peter L., Sun, Dawei, Helenbrook, Brian, and Harvey, David S. Removing a sheet from the surface of a melt using elasticity and buoyancy. United States: N. p., 2014.
Web.
Kellerman, Peter L., Sun, Dawei, Helenbrook, Brian, & Harvey, David S. Removing a sheet from the surface of a melt using elasticity and buoyancy. United States.
Kellerman, Peter L., Sun, Dawei, Helenbrook, Brian, and Harvey, David S. Tue .
"Removing a sheet from the surface of a melt using elasticity and buoyancy". United States. https://www.osti.gov/servlets/purl/1136751.
@article{osti_1136751,
title = {Removing a sheet from the surface of a melt using elasticity and buoyancy},
author = {Kellerman, Peter L. and Sun, Dawei and Helenbrook, Brian and Harvey, David S.},
abstractNote = {Embodiments related to sheet production are disclosed. A melt of a material is cooled to form a sheet of the material on the melt. The sheet is formed in a first region at a first sheet height. The sheet is translated to a second region such that it has a second sheet height higher than the first sheet height. The sheet is then separated from the melt. A seed wafer may be used to form the sheet.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {7}
}
Works referenced in this record:
Investigation of the meniscus stability in horizontal crystal ribbon growth
journal, September 1980
- Rhodes, C. A.; Sarraf, M. M.; Liu, C. H.
- Journal of Crystal Growth, Vol. 50, Issue 1, p. 94-101
Improvements in the Horizontal Ribbon Growth technique for single crystal silicon
journal, September 1980
- Kudo, B.
- Journal of Crystal Growth, Vol. 50, Issue 1, p. 247-259