Ultra-thin ohmic contacts for p-type nitride light emitting devices
Abstract
A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.
- Inventors:
- Issue Date:
- Research Org.:
- Cree Inc., Durham, NC (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1135722
- Patent Number(s):
- 8,759,868
- Application Number:
- 13/271,865
- Assignee:
- Cree, Inc. (Durham, NC)
- DOE Contract Number:
- FC26-00NT40985
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011 Oct 12
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Raffetto, Mark, Bharathan, Jayesh, Haberern, Kevin, Bergmann, Michael, Emerson, David, Ibbetson, James, and Li, Ting. Ultra-thin ohmic contacts for p-type nitride light emitting devices. United States: N. p., 2014.
Web.
Raffetto, Mark, Bharathan, Jayesh, Haberern, Kevin, Bergmann, Michael, Emerson, David, Ibbetson, James, & Li, Ting. Ultra-thin ohmic contacts for p-type nitride light emitting devices. United States.
Raffetto, Mark, Bharathan, Jayesh, Haberern, Kevin, Bergmann, Michael, Emerson, David, Ibbetson, James, and Li, Ting. Tue .
"Ultra-thin ohmic contacts for p-type nitride light emitting devices". United States. https://www.osti.gov/servlets/purl/1135722.
@article{osti_1135722,
title = {Ultra-thin ohmic contacts for p-type nitride light emitting devices},
author = {Raffetto, Mark and Bharathan, Jayesh and Haberern, Kevin and Bergmann, Michael and Emerson, David and Ibbetson, James and Li, Ting},
abstractNote = {A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {6}
}
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