Title: Ultra-thin ohmic contacts for p-type nitride light emitting devices

Abstract

A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

Inventors:

Raffetto, Mark; Bharathan, Jayesh; Haberern, Kevin; Bergmann, Michael; Emerson, David; Ibbetson, James; Li, Ting

Issue Date:

Tue Jun 24 00:00:00 EDT 2014

Research Org.:

Cree Inc., Durham, NC (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1135722

Patent Number(s):

8759868

Application Number:

13/271,865

Assignee:

Cree, Inc. (Durham, NC)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L2224/48463 - the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
H01L2224/73265 - Layer and wire connectors
H01L24/32 - {of an individual layer connector}
H01L2924/00 - Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/12041 - LED
H01L2924/12042 - LASER
H01L2924/3011 - Impedance
H01L2933/0016 - relating to electrodes
H01L33/32 - containing nitrogen
H01L33/38 - with a particular shape
H01L33/40 - Materials therefor
H01L33/405 - {Reflective materials}
H01L33/42 - Transparent materials

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DOE Contract Number:  

FC26-00NT40985

Resource Type:

Patent

Resource Relation:

Patent File Date: 2011 Oct 12

Country of Publication:

United States

Language:

English

Subject:

42 ENGINEERING