Ultra-thin ohmic contacts for p-type nitride light emitting devices
Abstract
A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.
- Inventors:
- Issue Date:
- Research Org.:
- Cree Inc., Durham, NC (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1135722
- Patent Number(s):
- 8759868
- Application Number:
- 13/271,865
- Assignee:
- Cree, Inc. (Durham, NC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FC26-00NT40985
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011 Oct 12
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Raffetto, Mark, Bharathan, Jayesh, Haberern, Kevin, Bergmann, Michael, Emerson, David, Ibbetson, James, and Li, Ting. Ultra-thin ohmic contacts for p-type nitride light emitting devices. United States: N. p., 2014.
Web.
Raffetto, Mark, Bharathan, Jayesh, Haberern, Kevin, Bergmann, Michael, Emerson, David, Ibbetson, James, & Li, Ting. Ultra-thin ohmic contacts for p-type nitride light emitting devices. United States.
Raffetto, Mark, Bharathan, Jayesh, Haberern, Kevin, Bergmann, Michael, Emerson, David, Ibbetson, James, and Li, Ting. Tue .
"Ultra-thin ohmic contacts for p-type nitride light emitting devices". United States. https://www.osti.gov/servlets/purl/1135722.
@article{osti_1135722,
title = {Ultra-thin ohmic contacts for p-type nitride light emitting devices},
author = {Raffetto, Mark and Bharathan, Jayesh and Haberern, Kevin and Bergmann, Michael and Emerson, David and Ibbetson, James and Li, Ting},
abstractNote = {A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {6}
}
Works referenced in this record:
Blue light emitting diode formed in silicon carbide
patent, April 1990
- Edmond, John Adam
- US Patent Document 4,918,497
Method of production of light emitting diodes
patent, October 1990
- Edmond, John Adam
- US Patent Document 4,966,862
Blue light emitting diode formed in silicon carbide
patent, June 1991
- Edmond, John Adam
- US Patent Document 5,027,168
High efficiency light emitting diodes from bipolar gallium nitride
patent, May 1993
- Carter, Jr., Calvin H.
- US Patent Document 5,210,051
Blue light-emitting diode with degenerate junction structure
patent, August 1994
- Edmond, John Adam; Kong, Hua-Shuang; Dmitriev, Vladimir A.
- US Patent Document 5,338,944
Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
patent, February 1995
- Edmond, John Adam; Dmitriev, Vladimir A.; Irvine, Kenneth George
- US Patent Document 5,393,993
Blue light-emitting diode with high external quantum efficiency
patent, May 1995
- Edmond, John Adam; Kong, Hua-Shuang
- US Patent Document 5,416,342
Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
patent, June 1996
- Edmond, John Adam; Bulman, Gary E.; Kong, Hua-Shuang
- US Patent Document 5,523,589
Method of forming green light emitting diode in silicon carbide
patent, February 1997
- Edmond, John Adam; Suvorov, Alexander
- US Patent Document 5,604,135
Method for producing high efficiency light-emitting diodes and resulting diode structures
patent, May 1997
- Negley, Gerald H.
- US Patent Document 5,631,190
Double heterojunction light emitting diode with gallium nitride active layer
patent, April 1998
- Edmond, John Adam; Kong, Hua-Shuang
- US Patent Document 5,739,554
High efficiency light emitting diodes
patent, June 1999
- Negley, Gerald H.
- US Patent Document 5,912,477
Double heterojunction light emitting diode with gallium nitride active layer
patent, September 2000
- Edmond, John Adam; Kong, Hua-Shuang
- US Patent Document 6,120,600
Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
patent, February 2001
- Edmond, John Adam; Kong, Hua-Shuang; Doverspike, Kathleen Marie
- US Patent Document 6,187,606
Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
patent, March 2001
- Edmond, John Adam; Kong, Hua-Shuang; Doverspike, Kathleen Marie
- US Patent Document 6,201,262
Transparent electrode film and group III nitride semiconductor device
patent, February 2003
- Uemura, Toshiya; Horiuchi, Shigemi
- US Patent Document 6,521,999
Ultraviolet light emitting diode
patent, December 2003
- Emerson, David Todd; Abare, Amber C.; Bergmann, Michael John
- US Patent Document 6,664,560
Ultraviolet light emitting diode
patent, May 2004
- Emerson, David Todd; Abare, Amber C.; Bergmann, Michael John
- US Patent Document 6,734,033
Light emitting diodes including modifications for submount bonding
patent, May 2004
- Slater, Jr., David B.; Williams, Bradley E.; Andrews, Peter Scott
- US Patent Document 6,740,906
Light emitting diodes including modifications for light extraction
patent, September 2004
- Slater, Jr., David B.; Glass, Robert C.; Swoboda, Charles M.
- US Patent Document 6,791,119
Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same
patent, September 2007
- Hahn, Berthold; Jacob, Ulrich; Lugauer, Hans-Jürgen
- US Patent Document 7,265,392
High-brightness blue-light emitting crystalline structure
patent-application, August 2002
- Chu, Ming-Sung; Chen, Sh-Kun; Sung, Chun-Yung
- US Patent Application 09/792446; 20020117672
Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
patent-application, January 2003
- Emerson, David Todd; Ibbetson, James; Bergmann, Michael John
- US Patent Application 10/140796; 20030006418
Electrode for light-emitting semiconductor devices and method of producing the electrode
patent-application, January 2003
- Miki, Hisayuki; Udagawa, Takashi; Muraki, Noritaka
- US Patent Application 10/136377; 20030006422
Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, semiconductor device manufacturing system, and cleaning method for semiconductor device manufacturing apparatus
patent-application, March 2003
- Yamamoto, Akihito; Nakao, Takashi; Mikata, Yuuichi
- US Patent Application 10/230423; 20030045960
Transparent electrode film and group III nitride semiconductor device
patent-application, July 2003
- Uemura, Toshiya; Horiuchi, Shigemi
- US Patent Application 10/325541; 20030122144
Module of reflection mirrors of L-shape
patent-application, July 2003
- Hsu, Chuan-Yu; Huang, Chih-Wen
- US Patent Application 10/142565; 20030123164
Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
patent-application, September 2003
- Slater, David B.; HAgleitner, Helmut
- US Patent Application 10/368063; 20030168663
Light-emitting-diode chip comprising a sequence of gan-based epitaxial layer which emit radiation, and a method for producing the same
patent-application, September 2003
- Hahn, Berthold; Jacob, Ulrich; Lugauer, Hans-Jurgen
- US Patent Application 10/296596; 20030168664
Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element
patent-application, November 2003
- Okazaki, Haruhiko; Sugawara, Hideto
- US Patent Application 10/417873; 20030209720
Semiconductor light emitting diode and method for manufacturing the same
patent-application, October 2004
- Cho, Jae-Hee; Kim, Hyun-Soo
- US Patent Application 10/717517; 20040206977
High Brightness Gallium Nitride-Based Light Emitting Diode With Transparent Conducting Oxide Spreading Layer
patent-application, October 2005
- Huang, Wen-Chieh
- US Patent Application 10/825290; 20050230701
Gallium nitride based III-V group compund semiconductor device and method of producing the same
patent-application, August 2007
- Nakamura, Shuji; Yamada, Takao; Senoh, Masayuki
- US Patent Application 11/714890; 20070178689
Gallium Nitride-Based Compound Semiconductor Light-Emitting Device
patent-application, February 2008
- Muraki, Noritaka; Watanabe, Munetaka; Miki, Hisayuki
- US Patent Application 10/586909; 20080048172
Reflective Positive Electrode And Gallium Nitride-Based Compound Semiconductor Light-Emitting Device Using The Same
patent-application, October 2009
- Kamei, Koji
- US Patent Application 12/492351; 20090263922
Determination of Electrical Contact Resistivity in Thermoelectric Modules (TEMs) From Module-Level Measurements
journal, April 2012
- Annapragada, S. Ravi; Salamon, Todd; Kolodner, Paul
- IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 2, Issue 4