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Title: Ultra-thin ohmic contacts for p-type nitride light emitting devices

Abstract

A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

Inventors:
; ; ; ; ; ;
Issue Date:
Research Org.:
Cree Inc., Durham, NC (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1135722
Patent Number(s):
8,759,868
Application Number:
13/271,865
Assignee:
Cree, Inc. (Durham, NC)
DOE Contract Number:  
FC26-00NT40985
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Oct 12
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Raffetto, Mark, Bharathan, Jayesh, Haberern, Kevin, Bergmann, Michael, Emerson, David, Ibbetson, James, and Li, Ting. Ultra-thin ohmic contacts for p-type nitride light emitting devices. United States: N. p., 2014. Web.
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Raffetto, Mark, Bharathan, Jayesh, Haberern, Kevin, Bergmann, Michael, Emerson, David, Ibbetson, James, & Li, Ting. Ultra-thin ohmic contacts for p-type nitride light emitting devices. United States.
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Raffetto, Mark, Bharathan, Jayesh, Haberern, Kevin, Bergmann, Michael, Emerson, David, Ibbetson, James, and Li, Ting. Tue . "Ultra-thin ohmic contacts for p-type nitride light emitting devices". United States. https://www.osti.gov/servlets/purl/1135722.
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@article{osti_1135722,
title = {Ultra-thin ohmic contacts for p-type nitride light emitting devices},
author = {Raffetto, Mark and Bharathan, Jayesh and Haberern, Kevin and Bergmann, Michael and Emerson, David and Ibbetson, James and Li, Ting},
abstractNote = {A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {6}
}
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Works referenced in this record:

Determination of Electrical Contact Resistivity in Thermoelectric Modules (TEMs) From Module-Level Measurements
journal, April 2012

  • Annapragada, S. Ravi; Salamon, Todd; Kolodner, Paul
  • IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 2, Issue 4
  • DOI: 10.1109/TCPMT.2012.2183595
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