Title: Semiconductor-nanocrystal/conjugated polymer thin films

Abstract

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Inventors:

Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

Issue Date:

2014-06-17

Research Org.:

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1134339

Patent Number(s):

8753916

Application Number:

11/056,430

Assignee:

The Regents of the University of California (Oakland, CA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L51/4266 - {the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S117/903 - Dendrite or web or cage technique

C - CHEMISTRY C09 - DYES C09K - MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE

C09K19/02 - characterised by optical, electrical or physical properties of the components, in general

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/549 - organic PV cells

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B7/005 - {Epitaxial layer growth}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L51/0037 - {Polyethylene dioxythiophene [PEDOT] and derivatives}

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y20/00 - Nanooptics, e.g. quantum optics or photonic crystals

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L51/426 - {comprising inorganic nanostructures, e.g. CdSe nanoparticles}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B29/48 - AIIBVI compounds {wherein A is Zn, Cd or Hg, and B is S, Se or Te}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L2251/308 - composed of indium oxides, e.g. ITO

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B29/605 - {Products containing multiple oriented crystallites, e.g. columnar crystallites}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/0384 - including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
H01L51/0036 - {Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

C - CHEMISTRY C09 - DYES C09K - MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE

C09K19/52 - characterised by components which are not liquid crystals, e.g. additives {with special physical aspect

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B29/40 - AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}

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DOE Contract Number:  

AC03-76SF00098

Resource Type:

Patent

Resource Relation:

Patent File Date: 2005 Feb 11

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 14 SOLAR ENERGY; 77 NANOSCIENCE AND NANOTECHNOLOGY