Title: Targets and processes for fabricating same

Abstract

In particular embodiments, the present disclosure provides targets including a metal layer and defining a hollow inner surface. The hollow inner surface has an internal apex. The distance between at least two opposing points of the internal apex is less than about 15 .mu.m. In particular examples, the distance is less than about 1 .mu.m. Particular implementations of the targets are free standing. The targets have a number of disclosed shaped, including cones, pyramids, hemispheres, and capped structures. The present disclosure also provides arrays of such targets. Also provided are methods of forming targets, such as the disclosed targets, using lithographic techniques, such as photolithographic techniques. In particular examples, a target mold is formed from a silicon wafer and then one or more sides of the mold are coated with a target material, such as one or more metals.

Inventors:

Cowna, Thomas; Malekos, Steven; Korgan, Grant; Adams, Jesse; Sentoku, Yasuhiko; LeGalloudec, Nathalie

Issue Date:

2014-06-10

Research Org.:

Board of Regents of the Nevada System of Higher Education, Reno, NV (USA)

Sponsoring Org.:

USDOE

OSTI Identifier:

1133937

Patent Number(s):

8,750,459

Application Number:

13/418,003

Assignee:

Board of Regents of the Nevada System of Higher Education (Reno, NV)

DOE Contract Number:  

FC52-01NV14050

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

42 ENGINEERING; 70 PLASMA PHYSICS AND FUSION TECHNOLOGY