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Title: Atomic layer deposition of quaternary chalcogenides

Abstract

Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu.sub.2ZnSnS.sub.4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1133663
Patent Number(s):
8,741,386
Application Number:
13/631,135
Assignee:
Uchicago Argonne, LLC (Chicago, IL)
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Thimsen, Elijah J, Riha, Shannon C, Martinson, Alex B.F., Elam, Jeffrey W, and Pellin, Michael J. Atomic layer deposition of quaternary chalcogenides. United States: N. p., 2014. Web.
Thimsen, Elijah J, Riha, Shannon C, Martinson, Alex B.F., Elam, Jeffrey W, & Pellin, Michael J. Atomic layer deposition of quaternary chalcogenides. United States.
Thimsen, Elijah J, Riha, Shannon C, Martinson, Alex B.F., Elam, Jeffrey W, and Pellin, Michael J. Tue . "Atomic layer deposition of quaternary chalcogenides". United States. https://www.osti.gov/servlets/purl/1133663.
@article{osti_1133663,
title = {Atomic layer deposition of quaternary chalcogenides},
author = {Thimsen, Elijah J and Riha, Shannon C and Martinson, Alex B.F. and Elam, Jeffrey W and Pellin, Michael J},
abstractNote = {Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu.sub.2ZnSnS.sub.4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {6}
}

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Works referenced in this record:

Atomic Layer Deposition of the Quaternary Chalcogenide Cu 2 ZnSnS 4
journal, August 2012

  • Thimsen, Elijah; Riha, Shannon C.; Baryshev, Sergey V.
  • Chemistry of Materials, Vol. 24, Issue 16
  • DOI: 10.1021/cm3015463

Atmospheric Pressure Chemical Vapor Deposition of Tin Sulfides (SnS, Sn 2 S 3 , and SnS 2 ) on Glass
journal, July 1999

  • Price, Louise S.; Parkin, Ivan P.; Hardy, Amanda M. E.
  • Chemistry of Materials, Vol. 11, Issue 7
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Tin Monosulfide Thin Films Grown by Atomic Layer Deposition Using Tin 2,4-Pentanedionate and Hydrogen Sulfide
journal, September 2010

  • Kim, Jay Yu; George, Steven M.
  • The Journal of Physical Chemistry C, Vol. 114, Issue 41
  • DOI: 10.1021/jp9120244

Atomic Layer Deposition of Tin Monosulfide Thin Films
journal, September 2011

  • Sinsermsuksakul, Prasert; Heo, Jaeyeong; Noh, Wontae
  • Advanced Energy Materials, Vol. 1, Issue 6, p. 1116-1125
  • DOI: 10.1002/aenm.201100330