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Title: Atomic layer deposition of quaternary chalcogenides

Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu.sub.2ZnSnS.sub.4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.
Inventors:
; ; ; ;
Issue Date:
OSTI Identifier:
1133663
Assignee:
Uchicago Argonne, LLC (Chicago, IL) CHO
Patent Number(s):
8,741,386
Application Number:
13/631,135
Contract Number:
AC02-06CH11357
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Other works cited in this record:

Atomic Layer Deposition of Tin Monosulfide Thin Films
journal, September 2011
  • Sinsermsuksakul, Prasert; Heo, Jaeyeong; Noh, Wontae
  • Advanced Energy Materials, Vol. 1, Issue 6, p. 1116-1125
  • DOI: 10.1002/aenm.201100330

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