Atomic layer deposition of quaternary chalcogenides

Thimsen, Elijah J; Riha, Shannon C; Martinson, Alex B.F.; Elam, Jeffrey W; Pellin, Michael J

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Title: Atomic layer deposition of quaternary chalcogenides

Abstract

Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu.sub.2ZnSnS.sub.4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.

Inventors:: Thimsen, Elijah J; Riha, Shannon C; Martinson, Alex B.F.; Elam, Jeffrey W; Pellin, Michael J

Issue Date:: Tue Jun 03 00:00:00 EDT 2014

Research Org.:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1133663

Patent Number(s):: 8741386

Application Number:: 13/631,135

Assignee:: Uchicago Argonne, LLC (Chicago, IL)

Patent Classifications (CPCs):: C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

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C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/305 - {Sulfides, selenides, or tellurides}
C23C16/306 - {AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te}
C23C16/45529 - {specially adapted for making a layer stack of alternating different compositions or gradient compositions}
C23C16/45531 - {specially adapted for making ternary or higher compositions}
C23C16/56 - After-treatment

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DOE Contract Number:: AC02-06CH11357

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Thimsen, Elijah J, Riha, Shannon C, Martinson, Alex B.F., Elam, Jeffrey W, and Pellin, Michael J. Atomic layer deposition of quaternary chalcogenides.  United States: N. p., 2014. 
        Web.

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                    Thimsen, Elijah J, Riha, Shannon C, Martinson, Alex B.F., Elam, Jeffrey W, & Pellin, Michael J. Atomic layer deposition of quaternary chalcogenides.  United States.

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                    Thimsen, Elijah J, Riha, Shannon C, Martinson, Alex B.F., Elam, Jeffrey W, and Pellin, Michael J. Tue .  
        "Atomic layer deposition of quaternary chalcogenides".  United States.  https://www.osti.gov/servlets/purl/1133663.

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@article{osti_1133663,

  title        = {Atomic layer deposition of quaternary chalcogenides},

  author       = {Thimsen, Elijah J and Riha, Shannon C and Martinson, Alex B.F. and Elam, Jeffrey W and Pellin, Michael J},

  abstractNote = {Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu.sub.2ZnSnS.sub.4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Jun 03 00:00:00 EDT 2014},

  month        = {Tue Jun 03 00:00:00 EDT 2014}

}

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Works referenced in this record:

Self -Organizing Nanostructured Solar Cells
patent-application, December 2009

Bent, Stacey F.; Clemens, Bruce M.
US Patent Application 12/4565208; 20090314342
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20090314342

Solar Cell Absorber Layer Formed From Equilibrium Precursors
patent-application, September 2010

Woodruff, Jacob; Van Duren, Jeroen K. J.; Robinson, Matthew R.
US Patent Application 12/706709; 20100248419
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20100248419

Atomic Layer Deposition of the Quaternary Chalcogenide Cu ₂ ZnSnS ₄
journal, August 2012

Thimsen, Elijah; Riha, Shannon C.; Baryshev, Sergey V.
Chemistry of Materials, Vol. 24, Issue 16
https://doi.org/10.1021/cm3015463

Atmospheric Pressure Chemical Vapor Deposition of Tin Sulfides (SnS, Sn ₂ S ₃ , and SnS ₂ ) on Glass
journal, July 1999

Price, Louise S.; Parkin, Ivan P.; Hardy, Amanda M. E.
Chemistry of Materials, Vol. 11, Issue 7
https://doi.org/10.1021/cm990005z

Tin Monosulfide Thin Films Grown by Atomic Layer Deposition Using Tin 2,4-Pentanedionate and Hydrogen Sulfide
journal, September 2010

Kim, Jay Yu; George, Steven M.
The Journal of Physical Chemistry C, Vol. 114, Issue 41
https://doi.org/10.1021/jp9120244

Atomic Layer Deposition of Tin Monosulfide Thin Films
journal, September 2011

Sinsermsuksakul, Prasert; Heo, Jaeyeong; Noh, Wontae
Advanced Energy Materials, Vol. 1, Issue 6, p. 1116-1125
https://doi.org/10.1002/aenm.201100330

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Similar Records

Title: Atomic layer deposition of quaternary chalcogenides

Abstract

Citation Formats

Self -Organizing Nanostructured Solar Cells patent-application, December 2009

Solar Cell Absorber Layer Formed From Equilibrium Precursors patent-application, September 2010

Atomic Layer Deposition of the Quaternary Chalcogenide Cu 2 ZnSnS 4 journal, August 2012

Atmospheric Pressure Chemical Vapor Deposition of Tin Sulfides (SnS, Sn 2 S 3 , and SnS 2 ) on Glass journal, July 1999

Tin Monosulfide Thin Films Grown by Atomic Layer Deposition Using Tin 2,4-Pentanedionate and Hydrogen Sulfide journal, September 2010

Atomic Layer Deposition of Tin Monosulfide Thin Films journal, September 2011

Self -Organizing Nanostructured Solar Cells
patent-application, December 2009

Solar Cell Absorber Layer Formed From Equilibrium Precursors
patent-application, September 2010

Atomic Layer Deposition of the Quaternary Chalcogenide Cu ₂ ZnSnS ₄
journal, August 2012

Atmospheric Pressure Chemical Vapor Deposition of Tin Sulfides (SnS, Sn ₂ S ₃ , and SnS ₂ ) on Glass
journal, July 1999

Tin Monosulfide Thin Films Grown by Atomic Layer Deposition Using Tin 2,4-Pentanedionate and Hydrogen Sulfide
journal, September 2010

Atomic Layer Deposition of Tin Monosulfide Thin Films
journal, September 2011