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Title: Method to grow group III-nitrides on copper using passivation layers

Abstract

Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1133649
Patent Number(s):
8,741,748
Application Number:
13/836,594
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Li, Qiming, Wang, George T, and Figiel, Jeffrey T. Method to grow group III-nitrides on copper using passivation layers. United States: N. p., 2014. Web.
Li, Qiming, Wang, George T, & Figiel, Jeffrey T. Method to grow group III-nitrides on copper using passivation layers. United States.
Li, Qiming, Wang, George T, and Figiel, Jeffrey T. Tue . "Method to grow group III-nitrides on copper using passivation layers". United States. https://www.osti.gov/servlets/purl/1133649.
@article{osti_1133649,
title = {Method to grow group III-nitrides on copper using passivation layers},
author = {Li, Qiming and Wang, George T and Figiel, Jeffrey T},
abstractNote = {Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {6}
}

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Works referenced in this record:

Epitaxial growth of GaN on copper substrates
journal, June 2006

  • Inoue, S.; Okamoto, K.; Matsuki, N.
  • Applied Physics Letters, Vol. 88, Issue 26
  • DOI: 10.1063/1.2213178