Method to grow group III-nitrides on copper using passivation layers

Li, Qiming; Wang, George T; Figiel, Jeffrey T

Title: Method to grow group III-nitrides on copper using passivation layers

Abstract

Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.

Inventors:: Li, Qiming; Wang, George T; Figiel, Jeffrey T

Issue Date:: 2014-06-03

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1133649

Patent Number(s):: 8741748

Application Number:: 13/836,594

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02491 - {Conductive materials}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/406 - {Gallium nitride}
C30B25/18 - characterised by the substrate

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02433 - {Crystal orientation}
H01L21/02425 - {Conductive materials, e.g. metallic silicides}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/403 - {AIII-nitrides}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/0254 - {Nitrides}
H01L21/02458 - {Nitrides}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B25/183 - {being provided with a buffer layer, e.g. a lattice matching layer}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02488 - {Insulating materials}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}

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DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Li, Qiming, Wang, George T, and Figiel, Jeffrey T. Method to grow group III-nitrides on copper using passivation layers.  United States: N. p., 2014. 
        Web.

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                    Li, Qiming, Wang, George T, & Figiel, Jeffrey T. Method to grow group III-nitrides on copper using passivation layers.  United States.

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                    Li, Qiming, Wang, George T, and Figiel, Jeffrey T. Tue .  
        "Method to grow group III-nitrides on copper using passivation layers".  United States.  https://www.osti.gov/servlets/purl/1133649.

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@article{osti_1133649,

  title        = {Method to grow group III-nitrides on copper using passivation layers},

  author       = {Li, Qiming and Wang, George T and Figiel, Jeffrey T},

  abstractNote = {Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2014},

  month        = {6}

}

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Works referenced in this record:

Epitaxial growth of GaN on copper substrates
journal, June 2006

Inoue, S.; Okamoto, K.; Matsuki, N.
Applied Physics Letters, Vol. 88, Issue 26
https://doi.org/10.1063/1.2213178

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Title: Method to grow group III-nitrides on copper using passivation layers

Abstract

Citation Formats

Epitaxial growth of GaN on copper substrates journal, June 2006

Epitaxial growth of GaN on copper substrates
journal, June 2006