Method to grow group III-nitrides on copper using passivation layers
Abstract
Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1133649
- Patent Number(s):
- 8,741,748
- Application Number:
- 13/836,594
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Li, Qiming, Wang, George T, and Figiel, Jeffrey T. Method to grow group III-nitrides on copper using passivation layers. United States: N. p., 2014.
Web.
Li, Qiming, Wang, George T, & Figiel, Jeffrey T. Method to grow group III-nitrides on copper using passivation layers. United States.
Li, Qiming, Wang, George T, and Figiel, Jeffrey T. Tue .
"Method to grow group III-nitrides on copper using passivation layers". United States. https://www.osti.gov/servlets/purl/1133649.
@article{osti_1133649,
title = {Method to grow group III-nitrides on copper using passivation layers},
author = {Li, Qiming and Wang, George T and Figiel, Jeffrey T},
abstractNote = {Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {6}
}
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Works referenced in this record:
Epitaxial growth of GaN on copper substrates
journal, June 2006
- Inoue, S.; Okamoto, K.; Matsuki, N.
- Applied Physics Letters, Vol. 88, Issue 26