Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication
Abstract
Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1132783
- Patent Number(s):
- 8735204
- Application Number:
- 13/744,152
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Jan 17
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Sopori, Bhushan. Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication. United States: N. p., 2014.
Web.
Sopori, Bhushan. Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication. United States.
Sopori, Bhushan. Tue .
"Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication". United States. https://www.osti.gov/servlets/purl/1132783.
@article{osti_1132783,
title = {Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication},
author = {Sopori, Bhushan},
abstractNote = {Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {5}
}
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Works referenced in this record:
Using silicon injection phenomenon during fire-through contact formation to improve process control and performance of screen-printed multicrystalline-silicon solar cells
conference, June 2010
- Sopori, Bhushan; Mehta, Vishal; Reedy, Robert
- 2010 35th IEEE Photovoltaic Specialists Conference (PVSC)