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Title: Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication

Abstract

Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.

Inventors:
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1132783
Patent Number(s):
8735204
Application Number:
13/744,152
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Jan 17
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sopori, Bhushan. Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication. United States: N. p., 2014. Web.
Sopori, Bhushan. Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication. United States.
Sopori, Bhushan. Tue . "Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication". United States. https://www.osti.gov/servlets/purl/1132783.
@article{osti_1132783,
title = {Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication},
author = {Sopori, Bhushan},
abstractNote = {Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {5}
}

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