Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication
Abstract
Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1132783
- Patent Number(s):
- 8,735,204
- Application Number:
- 13/744,152
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Jan 17
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Sopori, Bhushan. Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication. United States: N. p., 2014.
Web.
Sopori, Bhushan. Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication. United States.
Sopori, Bhushan. Tue .
"Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication". United States. https://www.osti.gov/servlets/purl/1132783.
@article{osti_1132783,
title = {Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication},
author = {Sopori, Bhushan},
abstractNote = {Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {5}
}
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