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Title: Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication

Abstract

Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.

Inventors:
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1132783
Patent Number(s):
8,735,204
Application Number:
13/744,152
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Jan 17
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sopori, Bhushan. Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication. United States: N. p., 2014. Web.
Sopori, Bhushan. Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication. United States.
Sopori, Bhushan. Tue . "Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication". United States. https://www.osti.gov/servlets/purl/1132783.
@article{osti_1132783,
title = {Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication},
author = {Sopori, Bhushan},
abstractNote = {Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {5}
}

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Works referenced in this record:

Using silicon injection phenomenon during fire-through contact formation to improve process control and performance of screen-printed multicrystalline-silicon solar cells
conference, June 2010

  • Sopori, Bhushan; Mehta, Vishal; Reedy, Robert
  • 2010 35th IEEE Photovoltaic Specialists Conference (PVSC)
  • DOI: 10.1109/PVSC.2010.5614411