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Title: Back-side readout semiconductor photomultiplier

Abstract

This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.

Inventors:
;
Issue Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1132056
Patent Number(s):
8,729,654
Application Number:
13/652,238
Assignee:
The Regents of the University of California (Oakland, CA)
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Oct 15
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Choong, Woon-Seng, and Holland, Stephen E. Back-side readout semiconductor photomultiplier. United States: N. p., 2014. Web.
Choong, Woon-Seng, & Holland, Stephen E. Back-side readout semiconductor photomultiplier. United States.
Choong, Woon-Seng, and Holland, Stephen E. Tue . "Back-side readout semiconductor photomultiplier". United States. https://www.osti.gov/servlets/purl/1132056.
@article{osti_1132056,
title = {Back-side readout semiconductor photomultiplier},
author = {Choong, Woon-Seng and Holland, Stephen E},
abstractNote = {This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {5}
}

Patent:

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