Back-side readout semiconductor photomultiplier
Abstract
This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1132056
- Patent Number(s):
- 8729654
- Application Number:
- 13/652,238
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-05CH11231
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2012 Oct 15
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Choong, Woon-Seng, and Holland, Stephen E. Back-side readout semiconductor photomultiplier. United States: N. p., 2014.
Web.
Choong, Woon-Seng, & Holland, Stephen E. Back-side readout semiconductor photomultiplier. United States.
Choong, Woon-Seng, and Holland, Stephen E. Tue .
"Back-side readout semiconductor photomultiplier". United States. https://www.osti.gov/servlets/purl/1132056.
@article{osti_1132056,
title = {Back-side readout semiconductor photomultiplier},
author = {Choong, Woon-Seng and Holland, Stephen E},
abstractNote = {This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {5}
}
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Works referencing / citing this record:
Solid state photomultiplier with improved pulse shape readout
patent, November 2014
- Dolinsky, Sergei Ivanovich
- US Patent Document 8,886,697