Methods for manufacturing monocrystalline or near-monocrystalline cast materials

Stoddard, Nathan G

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Title: Methods for manufacturing monocrystalline or near-monocrystalline cast materials

Abstract

Methods are provided for casting one or more of a semiconductor, an oxide, and an intermetallic material. With such methods, a cast body of a monocrystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm.

Inventors:: Stoddard, Nathan G

Issue Date:: 2014-04-29

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1130084

Patent Number(s):: 8709154

Application Number:: 12/670,212

Assignee:: AMG IdealCast Solar Corporation (Wayne, PA)

Patent Classifications (CPCs):: C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B11/14 - characterised by the seed, e.g. its crystallographic orientation
C30B29/06 - Silicon

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/182 - {Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/546 - Polycrystalline silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:: AC36-98GO10337

Resource Type:: Patent

Resource Relation:: Patent File Date: 2008 Jul 23

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Stoddard, Nathan G. Methods for manufacturing monocrystalline or near-monocrystalline cast materials.  United States: N. p., 2014. 
        Web.

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                    Stoddard, Nathan G. Methods for manufacturing monocrystalline or near-monocrystalline cast materials.  United States.

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                    Stoddard, Nathan G. Tue .  
        "Methods for manufacturing monocrystalline or near-monocrystalline cast materials".  United States.  https://www.osti.gov/servlets/purl/1130084.

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@article{osti_1130084,

  title        = {Methods for manufacturing monocrystalline or near-monocrystalline cast materials},

  author       = {Stoddard, Nathan G},

  abstractNote = {Methods are provided for casting one or more of a semiconductor, an oxide, and an intermetallic material. With such methods, a cast body of a monocrystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2014},

  month        = {4}

}

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Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.
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Methods for manufacturing geometric multi-crystalline cast materials

Patent Stoddard, Nathan G

Methods are provided for casting one or more of a semi-conductor, an oxide, and an intermetallic material. With such methods, a cast body of a geometrically ordered multi-crystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm.
Full Text Available
Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics

Patent Stoddard, Nathan G

Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of geometrically ordered multi-crystalline silicon may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm is provided.
Full Text Available
System and method for nuclear reactor fuel having freeze-cast matrix impregnated with nucleotide-rich material

Patent Wegst, Ulrike G. K.; Hunger, Philipp; Allen, Todd

A multiphase composite, formed by freeze-casting, lyophilization, and sintering, has sintered particles forming a scaffold having at least one region of aligned porosity; and a second phase formed in pores of the scaffold. In a particular embodiment, the second phase is a nuclear fuel, in another, the first phase is a nuclear fuel, and in others, both phases are nuclear fuels. In some embodiments, the first phase is a ceramic, and in other embodiments a metal such as stainless steel. In other embodiments, the second phase is a metal, and in other embodiments a ceramic. In some embodiments the secondmore » « less
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Title: Methods for manufacturing monocrystalline or near-monocrystalline cast materials

Abstract

Citation Formats

Method and apparatus for forming an elongated silicon crystalline body using a <110>{211}orientated seed crystal patent, February 1978

Die closing unit with oversize injection molding die patent, June 1978

Method of casting silicon patent, July 1978

Process and apparatus for the semicontinuous production of silicon moldings patent, November 1979

Novel silicon crystals and process for their preparation patent, May 1983

Die casting machine patent, May 1989

Float zone processing of particulate silicon patent, April 1992

Method of producing crystal bodies having controlled crystalline orientation patent, April 1993

Method for producing silicon single crystal from polycrystalline rod formed by continous casting patent, May 1993

Melt replenishment system for dendritic web growth patent, July 1993

Continuous liquid silicon recharging process in Czochralski crucible pulling patent, September 1993

Method of growth-orientation of a crystal on a device using an oriented seed layer patent, November 1993

Continuous liquid silicon recharging process in czochralski crucible pulling patent, June 1994

Method for manufacturing polycrystalline silicon thin-film solar cells patent, August 1994

Apparatus and method of growing single crystal patent, November 1994

Method for growth of crystal patent, November 1994

Process for the preparation of polycrystalline silicon ingot patent, July 1995

Method for the manufacture of large single crystals patent, August 1995

Solid state thermal conversion of polycrystalline alumina to sapphire using a seed crystal patent, August 1996

Method for the growth of industrial crystals patent, March 1997

Solid phase epitaxial crystallization of amorphous silicon films on insulating substrates patent, January 1998

Process for producing polycrystalline semiconductors patent, February 1998

Method for the growth of industrial crystals patent, May 1998

Method for forming polycrystalline silicon film and method for fabricating thin-film transistor patent, June 1998

Method for making large area single crystal silicon sheets patent, September 1998

Method for forming polycrystalline silicon from the crystallization of microcrystalline silicon patent, October 1998

Method of producing single crystals and a seed crystal used in the method patent, August 1999

Polycrystalline silicon from the crystallization of microcrystalline silicon patent, September 1999

Method and apparatus for the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber patent, February 2000

Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced patent, August 2000

Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced patent, August 2000

Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced patent, September 2000

Process and apparatus for producing polycrystalline semiconductor ingot patent, October 2000

Seed crystal and method of manufacturing single crystal patent, January 2001

Mold for producing silicon ingot and method for fabricating the same patent, January 2002

Calcium fluoride crystal, optical article and exposure apparatus for photo-lithography using the same patent, January 2002

Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films patent, October 2003

Method of forming thin film transistors on predominantly <100> polycrystalline silicon films patent, December 2003

Method of forming an LCD with predominantly <100> polycrystalline silicon regions patent, February 2004

Mold for producing silicon ingot and method for fabricating the same patent, May 2004

Method of shaping semisolid metals patent, August 2004

Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals patent, October 2004

Method of forming predominantly <100> polycrystalline silicon thin film transistors patent, November 2004

Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults patent, January 2005

Method and apparatus for shaping semisolid metals patent, February 2005

Controlled neck growth process for single crystal silicon patent, March 2005

System and method for forming single-crystal domains using crystal seeds patent, July 2005

Plasma production of polycrystalline silicon patent, August 2005

Apparatus and method for manufacturing semiconductor grains patent, February 2006

Mold for producing silicon ingot and method for fabricating the same patent-application, February 2002

Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults patent-application, August 2002

Method of forming thin film transistors on predominantly <100> polycrystalline silicon films patent-application, August 2002

Method of Forming Predominantly <100> Polycrystalline Silicon Thin Film Transistors patent-application, August 2002

Method of forming an LCD with predominantly <100> polycrystalline silicon regions patent-application, August 2002

Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films patent-application, August 2002

Method of growing oriented single crystals with reuseable crystal seeds or crystal nuclei patent-application, November 2002

Predominantly <100> polycrystalline silicon thin film transistor patent-application, February 2003

Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals patent-application, February 2003

Process for eliminating neck dislocations during czochralski crystal growth patent-application, March 2003

Method of forming predominantly <100> polycrystalline silicon thin film transistors patent-application, April 2003

Apparatus and method for manufacturing semiconductor grains patent-application, May 2003

Intermittent feeding technique for increasing the melting rate of polycrystalline silicon patent-application, June 2003

Plasma production of polycrystalline silicon patent-application, July 2003

Controlled neck growth process for single crystal silicon patent-application, November 2003

Method of producing crystal and apparatus for producing crystal patent-application, November 2003

Silicon wafer and method for producing silicon single crystal patent-application, July 2004

Reusable crucible for silicon ingot growth patent-application, October 2004

Method and apparatus for shaping semisolid metals patent-application, December 2004

Crystallization apparatus and method patent-application, December 2004

Uniform seeding to control grain and defect density of crystallized silicon for use in sub-micron thin film transistors patent-application, April 2005

Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same patent-application, June 2005

Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults patent-application, July 2005

Single crystal investment cast components and methods of making same patent-application, September 2005

Semiconductor thin film manufacturing method and device, beam-shaping mask, and thin film transistor patent-application, October 2005

Method of synthesising a crystalline material and material thus obtained patent-application, December 2006

Crucible apparatus and method of solidifying a molten material patent-application, February 2007

Directionally solidified solar-grade silicon using carbon crucibles journal, April 1979

Method and apparatus for forming an elongated silicon crystalline body using a <110>{211}orientated seed crystal
patent, February 1978

Die closing unit with oversize injection molding die
patent, June 1978

Method of casting silicon
patent, July 1978

Process and apparatus for the semicontinuous production of silicon moldings
patent, November 1979

Novel silicon crystals and process for their preparation
patent, May 1983

Die casting machine
patent, May 1989

Float zone processing of particulate silicon
patent, April 1992

Method of producing crystal bodies having controlled crystalline orientation
patent, April 1993

Method for producing silicon single crystal from polycrystalline rod formed by continous casting
patent, May 1993

Melt replenishment system for dendritic web growth
patent, July 1993

Continuous liquid silicon recharging process in Czochralski crucible pulling
patent, September 1993

Method of growth-orientation of a crystal on a device using an oriented seed layer
patent, November 1993

Continuous liquid silicon recharging process in czochralski crucible pulling
patent, June 1994

Method for manufacturing polycrystalline silicon thin-film solar cells
patent, August 1994

Apparatus and method of growing single crystal
patent, November 1994

Method for growth of crystal
patent, November 1994

Process for the preparation of polycrystalline silicon ingot
patent, July 1995

Method for the manufacture of large single crystals
patent, August 1995

Solid state thermal conversion of polycrystalline alumina to sapphire using a seed crystal
patent, August 1996

Method for the growth of industrial crystals
patent, March 1997

Solid phase epitaxial crystallization of amorphous silicon films on insulating substrates
patent, January 1998

Process for producing polycrystalline semiconductors
patent, February 1998

Method for the growth of industrial crystals
patent, May 1998

Method for forming polycrystalline silicon film and method for fabricating thin-film transistor
patent, June 1998

Method for making large area single crystal silicon sheets
patent, September 1998

Method for forming polycrystalline silicon from the crystallization of microcrystalline silicon
patent, October 1998

Method of producing single crystals and a seed crystal used in the method
patent, August 1999

Polycrystalline silicon from the crystallization of microcrystalline silicon
patent, September 1999

Method and apparatus for the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber
patent, February 2000

Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced
patent, August 2000

Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced
patent, August 2000

Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced
patent, September 2000

Process and apparatus for producing polycrystalline semiconductor ingot
patent, October 2000

Seed crystal and method of manufacturing single crystal
patent, January 2001

Mold for producing silicon ingot and method for fabricating the same
patent, January 2002

Calcium fluoride crystal, optical article and exposure apparatus for photo-lithography using the same
patent, January 2002

Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films
patent, October 2003

Method of forming thin film transistors on predominantly <100> polycrystalline silicon films
patent, December 2003

Method of forming an LCD with predominantly <100> polycrystalline silicon regions
patent, February 2004

Mold for producing silicon ingot and method for fabricating the same
patent, May 2004

Method of shaping semisolid metals
patent, August 2004

Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals
patent, October 2004

Method of forming predominantly <100> polycrystalline silicon thin film transistors
patent, November 2004

Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
patent, January 2005

Method and apparatus for shaping semisolid metals
patent, February 2005

Controlled neck growth process for single crystal silicon
patent, March 2005

System and method for forming single-crystal domains using crystal seeds
patent, July 2005

Plasma production of polycrystalline silicon
patent, August 2005

Apparatus and method for manufacturing semiconductor grains
patent, February 2006

Mold for producing silicon ingot and method for fabricating the same
patent-application, February 2002

Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
patent-application, August 2002

Method of forming thin film transistors on predominantly <100> polycrystalline silicon films
patent-application, August 2002

Method of Forming Predominantly <100> Polycrystalline Silicon Thin Film Transistors
patent-application, August 2002

Method of forming an LCD with predominantly <100> polycrystalline silicon regions
patent-application, August 2002

Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films
patent-application, August 2002

Method of growing oriented single crystals with reuseable crystal seeds or crystal nuclei
patent-application, November 2002

Predominantly <100> polycrystalline silicon thin film transistor
patent-application, February 2003

Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals
patent-application, February 2003

Process for eliminating neck dislocations during czochralski crystal growth
patent-application, March 2003

Method of forming predominantly <100> polycrystalline silicon thin film transistors
patent-application, April 2003

Apparatus and method for manufacturing semiconductor grains
patent-application, May 2003

Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
patent-application, June 2003

Plasma production of polycrystalline silicon
patent-application, July 2003

Controlled neck growth process for single crystal silicon
patent-application, November 2003

Method of producing crystal and apparatus for producing crystal
patent-application, November 2003

Silicon wafer and method for producing silicon single crystal
patent-application, July 2004

Reusable crucible for silicon ingot growth
patent-application, October 2004

Method and apparatus for shaping semisolid metals
patent-application, December 2004

Crystallization apparatus and method
patent-application, December 2004

Uniform seeding to control grain and defect density of crystallized silicon for use in sub-micron thin film transistors
patent-application, April 2005

Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same
patent-application, June 2005

Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
patent-application, July 2005

Single crystal investment cast components and methods of making same
patent-application, September 2005

Semiconductor thin film manufacturing method and device, beam-shaping mask, and thin film transistor
patent-application, October 2005

Method of synthesising a crystalline material and material thus obtained
patent-application, December 2006

Crucible apparatus and method of solidifying a molten material
patent-application, February 2007

Directionally solidified solar-grade silicon using carbon crucibles
journal, April 1979

Relaxation of thermal stresses by dislocation flow and multiplication in the continuous casting of silicon
journal, May 1997

Electromagnetic continuous pulling process compared to current casting processes with respect to solidification characteristics
journal, April 2002

Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique
journal, July 2005