Methods for manufacturing monocrystalline or near-monocrystalline cast materials
Abstract
Methods are provided for casting one or more of a semiconductor, an oxide, and an intermetallic material. With such methods, a cast body of a monocrystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1130084
- Patent Number(s):
- 8,709,154
- Application Number:
- 12/670,212
- Assignee:
- AMG IdealCast Solar Corporation (Wayne, PA)
- DOE Contract Number:
- AC36-98GO10337
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2008 Jul 23
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Stoddard, Nathan G. Methods for manufacturing monocrystalline or near-monocrystalline cast materials. United States: N. p., 2014.
Web.
Stoddard, Nathan G. Methods for manufacturing monocrystalline or near-monocrystalline cast materials. United States.
Stoddard, Nathan G. Tue .
"Methods for manufacturing monocrystalline or near-monocrystalline cast materials". United States. https://www.osti.gov/servlets/purl/1130084.
@article{osti_1130084,
title = {Methods for manufacturing monocrystalline or near-monocrystalline cast materials},
author = {Stoddard, Nathan G},
abstractNote = {Methods are provided for casting one or more of a semiconductor, an oxide, and an intermetallic material. With such methods, a cast body of a monocrystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {4}
}
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Works referenced in this record:
Mold for producing silicon ingot and method for fabricating the same
patent-application, February 2002
- Wakita, Saburo; Mitsuhashi, Akira; Sasaki, Jun-ichi
- US Patent Application 09/935549; 20020014574
Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
patent-application, August 2002
- Kim, Chang Bum; Kimbel, Steven L.; Libbert, Jeffrey L.
- US Patent Application 10/054629; 20020100410
Method of forming thin film transistors on predominantly <100> polycrystalline silicon films
patent-application, August 2002
- Voutsas, Apostolos
- US Patent Application 09/796927; 20020117666
Method of Forming Predominantly <100> Polycrystalline Silicon Thin Film Transistors
patent-application, August 2002
- Voutsas, Apostolos
- US Patent Application 09/796341; 20020117718
Method of forming an LCD with predominantly <100> polycrystalline silicon regions
patent-application, August 2002
- Voutsas, Apostolos
- US Patent Application 09/796330; 20020118317
Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films
patent-application, August 2002
- Voutsas, Apostolos
- US Patent Application 09/796345; 20020119644
Method of growing oriented single crystals with reuseable crystal seeds or crystal nuclei
patent-application, November 2002
- Wehrhan, Gunther
- US Patent Application 10/151422; 20020174825
Predominantly <100> polycrystalline silicon thin film transistor
patent-application, February 2003
- Voutsas, Apostolos
- US Patent Application 10/253806; 20030025134
Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals
patent-application, February 2003
- Snyder, David W.; Everson, William J.
- US Patent Application 10/221392; 20030029376
Process for eliminating neck dislocations during czochralski crystal growth
patent-application, March 2003
- Sreedharamurthy, Hariprasad; Nithianathan, Vijay
- US Patent Application 10/230609; 20030047130
Method of forming predominantly <100> polycrystalline silicon thin film transistors
patent-application, April 2003
- Voutsas, Apostolos
- US Patent Application 10/280990; 20030064551
Apparatus and method for manufacturing semiconductor grains
patent-application, May 2003
- Kitahara, Nobuyuki; Suzuki, Toshio; Suda, Noboru
- US Patent Application 10/277610; 20030080451
Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
patent-application, June 2003
- Holder, John Davis
- US Patent Application 10/002862; 20030101924
Plasma production of polycrystalline silicon
patent-application, July 2003
- Kelsey, Paul V.
- US Patent Application 10/346601; 20030133853
Controlled neck growth process for single crystal silicon
patent-application, November 2003
- Haga, Hiroyo; Kojima, Makoto; Saga, Shigemi
- US Patent Application 10/204654; 20030209186
Method of producing crystal and apparatus for producing crystal
patent-application, November 2003
- Asami, Masayoshi
- US Patent Application 10/442144; 20030217689
Silicon wafer and method for producing silicon single crystal
patent-application, July 2004
- Cho, Hyon-Jong; Lee, Cheol-Woo; Lee, Hong-Woo
- US Patent Application 10/741746; 20040129201
Reusable crucible for silicon ingot growth
patent-application, October 2004
- Khattak, Chandra P.; Schmid, Frederick
- US Patent Application 10/423250; 20040211496
Method and apparatus for shaping semisolid metals
patent-application, December 2004
- Adachi, Mitsuru; Sasaki, Hiroto; Harada, Yasunori
- US Patent Application 10/852952; 20040238150
Crystallization apparatus and method
patent-application, December 2004
- Doguchi, Kentaro
- US Patent Application 10/874454; 20040261691
Uniform seeding to control grain and defect density of crystallized silicon for use in sub-micron thin film transistors
patent-application, April 2005
- Cleeves, James M.; Gu, Shuo
- US Patent Application 10/681509; 20050072976
Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same
patent-application, June 2005
- Hong, Young Ho; Choi, Ill Soo; Kim, Sang Hee
- US Patent Application 11/001888; 20050120944
Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
patent-application, July 2005
- Kim, Chang Bum; Kimbel, Steven L.; Libbert, Jeffrey L.
- US Patent Application 11/005987; 20050150445
Single crystal investment cast components and methods of making same
patent-application, September 2005
- Bullied, Steven Joel; Marcin, JR., John Joseph; Renaud, Robert Charles
- US Patent Application 10/809072; 20050211408
Semiconductor thin film manufacturing method and device, beam-shaping mask, and thin film transistor
patent-application, October 2005
- Nakata, Mitsuru
- US Patent Application 11/094570; 20050221569
Method of synthesising a crystalline material and material thus obtained
patent-application, December 2006
- Pribat, Didier
- US Patent Application 10/561761; 20060280945
Crucible apparatus and method of solidifying a molten material
patent-application, February 2007
- Yamauchi, Norichika; Shimada, Takehiko
- US Patent Application 11/414544; 20070028835
Directionally solidified solar-grade silicon using carbon crucibles
journal, April 1979
- Ciszek, T. F.; Schwuttke, G. H.; Yang, K. H.
- Journal of Crystal Growth, Vol. 46, Issue 4, p. 527-533
Relaxation of thermal stresses by dislocation flow and multiplication in the continuous casting of silicon
journal, May 1997
- Dour, G.; Durand, F.; Brechet, Y.
- Modelling and Simulation in Materials Science and Engineering, Vol. 5, Issue 3
Electromagnetic continuous pulling process compared to current casting processes with respect to solidification characteristics
journal, April 2002
- Durand, Francis
- Solar Energy Materials and Solar Cells, Vol. 72, Issue 1-4, p. 125-132
Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique
journal, July 2005
- Kitamura, Masayuki; Usami, Noritaka; Sugawara, Takamasa
- Journal of Crystal Growth, Vol. 280, Issue 3-4, p. 419-424
Development of a rapid solidification process with a double-roller method
journal, February 1988
- Shibuya, Kiyoshi; Kogiku, Fumio; Yukumoto, Masao
- Materials Science and Engineering, Vol. 98, p. 25-28
Some Applications of Cold Crucible Technology for Silicon Photovoltaic Material Preparation
journal, January 1985
- Ciszek, T. F.
- Journal of The Electrochemical Society, Vol. 132, Issue 4
Production of low cost silicon wafers by continuous casting method-development of drip-controlled method
conference, January 1994
- Goda, S.; Moritani, T.; Hatanaka, Y.
- Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)
Microstructure and Electrical Properties of some Multicrystalline Silicon Billets Continuously Cast in a Cold Crucible
journal, May 1996
- Périchaud, Isabelle; Dour, Gilles; Pillin, B.
- Solid State Phenomena, Vol. 51-52