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Title: Methods for manufacturing monocrystalline or near-monocrystalline cast materials

Abstract

Methods are provided for casting one or more of a semiconductor, an oxide, and an intermetallic material. With such methods, a cast body of a monocrystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm.

Inventors:
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1130084
Patent Number(s):
8709154
Application Number:
12/670,212
Assignee:
AMG IdealCast Solar Corporation (Wayne, PA)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC36-98GO10337
Resource Type:
Patent
Resource Relation:
Patent File Date: 2008 Jul 23
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Stoddard, Nathan G. Methods for manufacturing monocrystalline or near-monocrystalline cast materials. United States: N. p., 2014. Web.
Stoddard, Nathan G. Methods for manufacturing monocrystalline or near-monocrystalline cast materials. United States.
Stoddard, Nathan G. Tue . "Methods for manufacturing monocrystalline or near-monocrystalline cast materials". United States. https://www.osti.gov/servlets/purl/1130084.
@article{osti_1130084,
title = {Methods for manufacturing monocrystalline or near-monocrystalline cast materials},
author = {Stoddard, Nathan G},
abstractNote = {Methods are provided for casting one or more of a semiconductor, an oxide, and an intermetallic material. With such methods, a cast body of a monocrystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {4}
}

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Works referenced in this record:

Directionally solidified solar-grade silicon using carbon crucibles
journal, April 1979


Relaxation of thermal stresses by dislocation flow and multiplication in the continuous casting of silicon
journal, May 1997


Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique
journal, July 2005


Development of a rapid solidification process with a double-roller method
journal, February 1988


Some Applications of Cold Crucible Technology for Silicon Photovoltaic Material Preparation
journal, January 1985


Production of low cost silicon wafers by continuous casting method-development of drip-controlled method
conference, January 1994

  • Goda, S.; Moritani, T.; Hatanaka, Y.
  • Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)
  • https://doi.org/10.1109/WCPEC.1994.519953