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Title: Direct chemical vapor deposition of graphene on dielectric surfaces

Abstract

A substrate is provided that has a metallic layer on a substrate surface of a substrate. A film made of a two dimensional (2-D) material, such as graphene, is deposited on a metallic surface of the metallic layer. The metallic layer is dewet and/or removed to provide the film on the substrate surface.

Inventors:
;
Issue Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1130059
Patent Number(s):
8,709,881
Application Number:
13/098,929
Assignee:
The Regents of the University of California (Oakland, CA)
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 May 02
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Zhang, Yuegang, and Ismach, Ariel. Direct chemical vapor deposition of graphene on dielectric surfaces. United States: N. p., 2014. Web.
Zhang, Yuegang, & Ismach, Ariel. Direct chemical vapor deposition of graphene on dielectric surfaces. United States.
Zhang, Yuegang, and Ismach, Ariel. Tue . "Direct chemical vapor deposition of graphene on dielectric surfaces". United States. https://www.osti.gov/servlets/purl/1130059.
@article{osti_1130059,
title = {Direct chemical vapor deposition of graphene on dielectric surfaces},
author = {Zhang, Yuegang and Ismach, Ariel},
abstractNote = {A substrate is provided that has a metallic layer on a substrate surface of a substrate. A film made of a two dimensional (2-D) material, such as graphene, is deposited on a metallic surface of the metallic layer. The metallic layer is dewet and/or removed to provide the film on the substrate surface.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {4}
}

Patent:

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