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Title: Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby

Abstract

A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

Inventors:
; ; ;
Issue Date:
Research Org.:
National Energy Technology Laboratory (NETL), Pittsburgh, PA, Morgantown, WV (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1129017
Patent Number(s):
8685781
Application Number:
13/187,276
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
AC36-080028308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Jul 20
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Semonin, Octavi Escala, Luther, Joseph M, Beard, Matthew C, and Chen, Hsiang-Yu. Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby. United States: N. p., 2014. Web.
Semonin, Octavi Escala, Luther, Joseph M, Beard, Matthew C, & Chen, Hsiang-Yu. Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby. United States.
Semonin, Octavi Escala, Luther, Joseph M, Beard, Matthew C, and Chen, Hsiang-Yu. Tue . "Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby". United States. https://www.osti.gov/servlets/purl/1129017.
@article{osti_1129017,
title = {Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby},
author = {Semonin, Octavi Escala and Luther, Joseph M and Beard, Matthew C and Chen, Hsiang-Yu},
abstractNote = {A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {4}
}

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Works referenced in this record:

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