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Title: Mutually injection locked lasers for enhanced frequency response

Abstract

Semiconductor light-emitting devices; methods of forming semi-conductor light emitting devices, and methods of operating semi-conductor light emitting devices are provided. A semiconductor light-emitting device includes a first laser section monolithically integrated with a second laser section on a common substrate. Each laser section has a phase section, a gain section and at least one distributed Bragg reflector (DBR) structure. The first laser section and the second laser section are optically coupled to permit optical feedback therebetween. Each phase section is configured to independently tune a respective one of the first laser section and second laser section relative to each other.

Inventors:
; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1128693
Patent Number(s):
8,687,665
Application Number:
13/233,221
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Sep 15
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Tauke-Pedretti, Anna, Skogen, Erik J, Vawter, Gregory A, and Chow, Weng W. Mutually injection locked lasers for enhanced frequency response. United States: N. p., 2014. Web.
Tauke-Pedretti, Anna, Skogen, Erik J, Vawter, Gregory A, & Chow, Weng W. Mutually injection locked lasers for enhanced frequency response. United States.
Tauke-Pedretti, Anna, Skogen, Erik J, Vawter, Gregory A, and Chow, Weng W. Tue . "Mutually injection locked lasers for enhanced frequency response". United States. https://www.osti.gov/servlets/purl/1128693.
@article{osti_1128693,
title = {Mutually injection locked lasers for enhanced frequency response},
author = {Tauke-Pedretti, Anna and Skogen, Erik J and Vawter, Gregory A and Chow, Weng W},
abstractNote = {Semiconductor light-emitting devices; methods of forming semi-conductor light emitting devices, and methods of operating semi-conductor light emitting devices are provided. A semiconductor light-emitting device includes a first laser section monolithically integrated with a second laser section on a common substrate. Each laser section has a phase section, a gain section and at least one distributed Bragg reflector (DBR) structure. The first laser section and the second laser section are optically coupled to permit optical feedback therebetween. Each phase section is configured to independently tune a respective one of the first laser section and second laser section relative to each other.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {4}
}

Patent:

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Works referenced in this record:

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