Mutually injection locked lasers for enhanced frequency response
Abstract
Semiconductor light-emitting devices; methods of forming semi-conductor light emitting devices, and methods of operating semi-conductor light emitting devices are provided. A semiconductor light-emitting device includes a first laser section monolithically integrated with a second laser section on a common substrate. Each laser section has a phase section, a gain section and at least one distributed Bragg reflector (DBR) structure. The first laser section and the second laser section are optically coupled to permit optical feedback therebetween. Each phase section is configured to independently tune a respective one of the first laser section and second laser section relative to each other.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1128693
- Patent Number(s):
- 8687665
- Application Number:
- 13/233,221
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011 Sep 15
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Tauke-Pedretti, Anna, Skogen, Erik J, Vawter, Gregory A, and Chow, Weng W. Mutually injection locked lasers for enhanced frequency response. United States: N. p., 2014.
Web.
Tauke-Pedretti, Anna, Skogen, Erik J, Vawter, Gregory A, & Chow, Weng W. Mutually injection locked lasers for enhanced frequency response. United States.
Tauke-Pedretti, Anna, Skogen, Erik J, Vawter, Gregory A, and Chow, Weng W. Tue .
"Mutually injection locked lasers for enhanced frequency response". United States. https://www.osti.gov/servlets/purl/1128693.
@article{osti_1128693,
title = {Mutually injection locked lasers for enhanced frequency response},
author = {Tauke-Pedretti, Anna and Skogen, Erik J and Vawter, Gregory A and Chow, Weng W},
abstractNote = {Semiconductor light-emitting devices; methods of forming semi-conductor light emitting devices, and methods of operating semi-conductor light emitting devices are provided. A semiconductor light-emitting device includes a first laser section monolithically integrated with a second laser section on a common substrate. Each laser section has a phase section, a gain section and at least one distributed Bragg reflector (DBR) structure. The first laser section and the second laser section are optically coupled to permit optical feedback therebetween. Each phase section is configured to independently tune a respective one of the first laser section and second laser section relative to each other.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {4}
}
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