Plasma processes for producing silanes and derivatives thereof

Laine, Richard M; Massey, Dean Richard; Peterson, Peter Young

Title: Plasma processes for producing silanes and derivatives thereof

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Abstract

The invention is generally related to process for generating one or more molecules having the formula Si.sub.xH.sub.y, Si.sub.xD.sub.y, Si.sub.xH.sub.yD.sub.z, and mixtures thereof, where x,y and z are integers .gtoreq.1, H is hydrogen and D is deuterium, such as silane, comprising the steps of: providing a silicon containing material, wherein the silicon containing material includes at least 20 weight percent silicon atoms based on the total weight of the silicon containing material; generating a plasma capable of vaporizing a silicon atom, sputtering a silicon atom, or both using a plasma generating device; and contacting the plasma to the silicon containing material in a chamber having an atmosphere that includes at least about 0.5 mole percent hydrogen atoms and/or deuterium atoms based on the total moles of atoms in the atmosphere; so that a molecule having the formula Si.sub.xH.sub.y; (e.g., silane) is generated. The process preferably includes a step of removing one or more impurities from the Si.sub.xH.sub.y (e.g., the silane) to form a clean Si.sub.xH.sub.y, Si.sub.xD.sub.y, Si.sub.xH.sub.yD.sub.z (e.g., silane). The process may also include a step of reacting the Si.sub.xH.sub.y, Si.sub.xD.sub.y, Si.sub.xH.sub.yD.sub.z (e.g., the silane) to produce a high purity silicon containing material such as electronic grade metallic silicon, photovoltaic grademore » metallic silicon, or both. « less

Inventors:: Laine, Richard M; Massey, Dean Richard; Peterson, Peter Young

Issue Date:: 2014-03-25

Research Org.:: Mayaterials, Inc, Pinckney, MI (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1128683

Patent Number(s):: 8679438

Application Number:: 13/021,324

Assignee:: Laine, Richard M. (Ann Arbor, MI)

Patent Classifications (CPCs):: Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

C - CHEMISTRY C22 - METALLURGY C22B - PRODUCTION AND REFINING OF METALS

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Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P10/122 - by capturing CO2

C - CHEMISTRY C22 - METALLURGY C22B - PRODUCTION AND REFINING OF METALS
C22B5/10 - by solid carbonaceous reducing agents
C22B1/244 - organic
C22B61/00 - Obtaining metals not elsewhere provided for in this subclass
C22B1/02 - Roasting processes

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
C01B33/025 - with carbon or a solid carbonaceous material, i.e. carbo-thermal process
C01B33/023 - by reduction of silica or {free} silica-containing material
C01B33/037 - Purification

C - CHEMISTRY C22 - METALLURGY C22B - PRODUCTION AND REFINING OF METALS
C22B7/001 - {Dry processes}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P10/20 - Process efficiency

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DOE Contract Number:: FG36-08GO18009

Resource Type:: Patent

Resource Relation:: Patent File Date: 2011 Feb 04

Country of Publication:: United States

Language:: English

Subject:: 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats


                    Laine, Richard M, Massey, Dean Richard, and Peterson, Peter Young. Plasma processes for producing silanes and derivatives thereof.  United States: N. p., 2014. 
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                    Laine, Richard M, Massey, Dean Richard, & Peterson, Peter Young. Plasma processes for producing silanes and derivatives thereof.  United States.

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                    Laine, Richard M, Massey, Dean Richard, and Peterson, Peter Young. Tue .  
        "Plasma processes for producing silanes and derivatives thereof".  United States.  https://www.osti.gov/servlets/purl/1128683.

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@article{osti_1128683,

  title        = {Plasma processes for producing silanes and derivatives thereof},

  author       = {Laine, Richard M and Massey, Dean Richard and Peterson, Peter Young},

  abstractNote = {The invention is generally related to process for generating one or more molecules having the formula Si.sub.xH.sub.y, Si.sub.xD.sub.y, Si.sub.xH.sub.yD.sub.z, and mixtures thereof, where x,y and z are integers .gtoreq.1, H is hydrogen and D is deuterium, such as silane, comprising the steps of: providing a silicon containing material, wherein the silicon containing material includes at least 20 weight percent silicon atoms based on the total weight of the silicon containing material; generating a plasma capable of vaporizing a silicon atom, sputtering a silicon atom, or both using a plasma generating device; and contacting the plasma to the silicon containing material in a chamber having an atmosphere that includes at least about 0.5 mole percent hydrogen atoms and/or deuterium atoms based on the total moles of atoms in the atmosphere; so that a molecule having the formula Si.sub.xH.sub.y; (e.g., silane) is generated. The process preferably includes a step of removing one or more impurities from the Si.sub.xH.sub.y (e.g., the silane) to form a clean Si.sub.xH.sub.y, Si.sub.xD.sub.y, Si.sub.xH.sub.yD.sub.z (e.g., silane). The process may also include a step of reacting the Si.sub.xH.sub.y, Si.sub.xD.sub.y, Si.sub.xH.sub.yD.sub.z (e.g., the silane) to produce a high purity silicon containing material such as electronic grade metallic silicon, photovoltaic grade metallic silicon, or both.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2014},

  month        = {3}

}

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