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Title: Arrays of ultrathin silicon solar microcells

Abstract

Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
University of Illinois, Urbana, IL, USA
Sponsoring Org.:
USDOE
OSTI Identifier:
1128543
Patent Number(s):
8,679,888
Application Number:
13/120,486
Assignee:
The Board of Trustees of the University of Illinois (Urbana, IL)
DOE Contract Number:  
FG02-07ER46453; FG02-07ER46471
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Rogers, John A, Rockett, Angus A, Nuzzo, Ralph, Yoon, Jongseung, and Baca, Alfred. Arrays of ultrathin silicon solar microcells. United States: N. p., 2014. Web.
Rogers, John A, Rockett, Angus A, Nuzzo, Ralph, Yoon, Jongseung, & Baca, Alfred. Arrays of ultrathin silicon solar microcells. United States.
Rogers, John A, Rockett, Angus A, Nuzzo, Ralph, Yoon, Jongseung, and Baca, Alfred. Tue . "Arrays of ultrathin silicon solar microcells". United States. https://www.osti.gov/servlets/purl/1128543.
@article{osti_1128543,
title = {Arrays of ultrathin silicon solar microcells},
author = {Rogers, John A and Rockett, Angus A and Nuzzo, Ralph and Yoon, Jongseung and Baca, Alfred},
abstractNote = {Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {3}
}

Patent:

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