skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Trench process and structure for backside contact solar cells with polysilicon doped regions

Abstract

A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

Inventors:
; ;
Issue Date:
Research Org.:
SunPower Corporation, San Jose, CA, USA
Sponsoring Org.:
USDOE
OSTI Identifier:
1127135
Patent Number(s):
8,673,673
Application Number:
13/872,961
Assignee:
SunPower Corporation (San Jose, CA) GFO
DOE Contract Number:  
FC36-07G017043
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

De Ceuster, Denis, Cousins, Peter John, and Smith, David D. Trench process and structure for backside contact solar cells with polysilicon doped regions. United States: N. p., 2014. Web.
De Ceuster, Denis, Cousins, Peter John, & Smith, David D. Trench process and structure for backside contact solar cells with polysilicon doped regions. United States.
De Ceuster, Denis, Cousins, Peter John, and Smith, David D. Tue . "Trench process and structure for backside contact solar cells with polysilicon doped regions". United States. https://www.osti.gov/servlets/purl/1127135.
@article{osti_1127135,
title = {Trench process and structure for backside contact solar cells with polysilicon doped regions},
author = {De Ceuster, Denis and Cousins, Peter John and Smith, David D},
abstractNote = {A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {3}
}

Patent:

Save / Share:

Works referenced in this record: