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Title: Black GE based on crystalline/amorphous core/shell nanoneedle arrays

Abstract

Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (.about.4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (.about.75.degree.) and for relatively short nanoneedle lengths (.about.1 .mu.m). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of .about.1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.

Inventors:
; ;
Issue Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1127081
Patent Number(s):
8664095
Application Number:
13/332,743
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Javey, Ali, Chueh, Yu-Lun, and Fan, Zhiyong. Black GE based on crystalline/amorphous core/shell nanoneedle arrays. United States: N. p., 2014. Web.
Javey, Ali, Chueh, Yu-Lun, & Fan, Zhiyong. Black GE based on crystalline/amorphous core/shell nanoneedle arrays. United States.
Javey, Ali, Chueh, Yu-Lun, and Fan, Zhiyong. Tue . "Black GE based on crystalline/amorphous core/shell nanoneedle arrays". United States. https://www.osti.gov/servlets/purl/1127081.
@article{osti_1127081,
title = {Black GE based on crystalline/amorphous core/shell nanoneedle arrays},
author = {Javey, Ali and Chueh, Yu-Lun and Fan, Zhiyong},
abstractNote = {Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (.about.4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (.about.75.degree.) and for relatively short nanoneedle lengths (.about.1 .mu.m). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of .about.1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {3}
}

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