Title: Method for fabrication of crack-free ceramic dielectric films

Abstract

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

Inventors:

Ma, Beihai; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan; Narayanan, Manoj

Issue Date:

Tue Feb 11 00:00:00 EST 2014

Research Org.:

Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1124087

Patent Number(s):

8647737

Application Number:

13/250,926

Assignee:

UChicago Argonne, LLC (Chicago, IL)

Patent Classifications (CPCs):

C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

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C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA

C04B2235/3213 - Strontium oxides or oxide-forming salts thereof
C04B2235/3227 - Lanthanum oxide or oxide-forming salts thereof
C04B2235/6562 - Heating rate
C04B35/4682 - {based on BaTiO3 perovskite phase}
C04B35/493 - containing also other lead compounds
C04B35/624 - Sol-gel processing
C04B35/634 - Polymers

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C18/1216 - {Metal oxides
C23C18/1225 - {Deposition of multilayers of inorganic material}
C23C18/1241 - {Metallic substrates}
C23C18/1254 - {Sol or sol-gel processing}
C23C18/1283 - {Control of temperature, e.g. gradual temperature increase, modulation of temperature}
C23C18/1295 - {with after-treatment of the deposited inorganic material}
C23C18/208 - {with use of metal first}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01B - CABLES

H01B19/04 - Treating the surfaces, e.g. applying coatings

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02118 - {carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
H01L21/02186 - {the material containing titanium, e.g. TiO2}
H01L21/02189 - {the material containing zirconium, e.g. ZrO2}
H01L21/02192 - {the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium}
H01L21/02194 - {the material containing more than one metal element}
H01L21/02197 - {the material having a perovskite structure, e.g. BaTiO3}
H01L21/02282 - {liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating}
H01L21/02356 - {treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer}
H01L21/3105 - After-treatment
H01L28/55 - {with a dielectric comprising a perovskite structure material}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Y10T428/24975 - No layer or component greater than 5 mils thick

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DOE Contract Number:  

AC02-06CH11357

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE