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Title: Method for fabrication of crack-free ceramic dielectric films

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.
Inventors:
; ; ; ;
Issue Date:
OSTI Identifier:
1124087
Assignee:
UChicago Argonne, LLC (Chicago, IL) ANL
Patent Number(s):
8,647,737
Application Number:
13/250,926
Contract Number:
AC02-06CH11357
Research Org:
ANL (Argonne National Laboratory (ANL), Argonne, IL (United States))
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Other works cited in this record:

Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates
patent, March 1993

Development of PLZT dielectrics on base metal foils for embedded capacitors
journal, January 2010

Improved dielectric properties of lead lanthanum zirconate titanate thin films on copper substrates
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Single-Step Deposition of Gel-Derived Lead Zirconate Titanate Films: Critical Thickness and Gel Film to Ceramic Film Conversion
journal, November 2002

Densification of the PLZT Films Derived from Polymer-Modified Solution by Tailoring Annealing Conditions
journal, March 2007

Chemical solution deposition of ferroelectric lead lanthanum zirconate titanate films on base-metal foils
journal, January 2008
  • Ma, Beihai; Kwon, Do-Kyun; Narayanan, Manoj
  • Journal of Electroceramics, Vol. 22, Issue 4, p. 383-389
  • DOI: 10.1007/s10832-007-9410-1

Effect of polyvinylpyrrolidone on the formation of perovskite phase and rosette-like structure in sol-gel–derived PLZT films
journal, August 2007
  • Du, Z. H.; Zhang, T. S.; Ma, J.
  • Journal of Materials Research, Vol. 22, Issue 8, p. 2195-2203
  • DOI: 10.1557/jmr.2007.0283

Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils
journal, July 2011

Dielectric properties of PLZT film-on-foil capacitors
journal, July 2008

Effects of sintering temperature on the microstructure and dielectric properties of titanium dioxide ceramics
journal, July 2010
  • Chao, Sheng; Petrovsky, Vladimir; Dogan, Fatih
  • Journal of Materials Science, Vol. 45, Issue 24, p. 6685-6693
  • DOI: 10.1007/s10853-010-4761-4

Dielectric strength and reliability of ferroelectric PLZT films deposited on nickel substrates
journal, June 2009
  • Ma, Beihai; Narayanan, Manoj; Balachandran, U. (Balu)
  • Materials Letters, Vol. 63, Issue 15, p. 1353-1356
  • DOI: 10.1016/j.matlet.2009.03.021

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