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Title: Hetero-junction photovoltaic device and method of fabricating the device

Abstract

A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material. An oxidation state of at least a portion of one of the p-type or the n-type semiconductor materials is altered relative to the other, such that the band-gap energy of the semiconductor materials differ with respect to stoichiometric compositions and the device preferentially absorbs particular selected bands of radiation.

Inventors:
; ; ;
Issue Date:
Research Org.:
ORNL (Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1119688
Patent Number(s):
8,647,915
Application Number:
12/974,425
Assignee:
UT-Battelle, LLC (Oak Ridge, TN); University of Tennessee Research Foundation (Knoxville, TN)
DOE Contract Number:  
ACO5-000R22725
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Aytug, Tolga, Christen, David K, Paranthaman, Mariappan Parans, and Polat, Ozgur. Hetero-junction photovoltaic device and method of fabricating the device. United States: N. p., 2014. Web.
Aytug, Tolga, Christen, David K, Paranthaman, Mariappan Parans, & Polat, Ozgur. Hetero-junction photovoltaic device and method of fabricating the device. United States.
Aytug, Tolga, Christen, David K, Paranthaman, Mariappan Parans, and Polat, Ozgur. Mon . "Hetero-junction photovoltaic device and method of fabricating the device". United States. https://www.osti.gov/servlets/purl/1119688.
@article{osti_1119688,
title = {Hetero-junction photovoltaic device and method of fabricating the device},
author = {Aytug, Tolga and Christen, David K and Paranthaman, Mariappan Parans and Polat, Ozgur},
abstractNote = {A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material. An oxidation state of at least a portion of one of the p-type or the n-type semiconductor materials is altered relative to the other, such that the band-gap energy of the semiconductor materials differ with respect to stoichiometric compositions and the device preferentially absorbs particular selected bands of radiation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {2}
}

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Works referenced in this record:

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