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Title: Tunable terahertz radiation source

Abstract

Terahertz radiation source and method of producing terahertz radiation, said source comprising a junction stack, said junction stack comprising a crystalline material comprising a plurality of self-synchronized intrinsic Josephson junctions; an electrically conductive material in contact with two opposing sides of said crystalline material; and a substrate layer disposed upon at least a portion of both the crystalline material and the electrically-conductive material, wherein the crystalline material has a c-axis which is parallel to the substrate layer, and wherein the source emits at least 1 mW of power.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
LANL (Los Alamos National Laboratory (LANL), Los Alamos, NM (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1117844
Patent Number(s):
8,633,472
Application Number:
12/541,073
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM)
DOE Contract Number:  
AC52-06NA25396
Resource Type:
Patent
Resource Relation:
Patent File Date: 2009 Sep 14
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Boulaevskii, Lev, Feldmann, David M, Jia, Quanxi, Koshelev, Alexei, and Moody, Nathan A. Tunable terahertz radiation source. United States: N. p., 2014. Web.
Boulaevskii, Lev, Feldmann, David M, Jia, Quanxi, Koshelev, Alexei, & Moody, Nathan A. Tunable terahertz radiation source. United States.
Boulaevskii, Lev, Feldmann, David M, Jia, Quanxi, Koshelev, Alexei, and Moody, Nathan A. Tue . "Tunable terahertz radiation source". United States. https://www.osti.gov/servlets/purl/1117844.
@article{osti_1117844,
title = {Tunable terahertz radiation source},
author = {Boulaevskii, Lev and Feldmann, David M and Jia, Quanxi and Koshelev, Alexei and Moody, Nathan A},
abstractNote = {Terahertz radiation source and method of producing terahertz radiation, said source comprising a junction stack, said junction stack comprising a crystalline material comprising a plurality of self-synchronized intrinsic Josephson junctions; an electrically conductive material in contact with two opposing sides of said crystalline material; and a substrate layer disposed upon at least a portion of both the crystalline material and the electrically-conductive material, wherein the crystalline material has a c-axis which is parallel to the substrate layer, and wherein the source emits at least 1 mW of power.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {1}
}

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