Layered semiconductor neutron detectors

Title: Layered semiconductor neutron detectors

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Abstract

Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

Inventors:: Mao, Samuel S; Perry, Dale L

Issue Date:: 2013-12-10

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1109473

Patent Number(s):: 8604441

Application Number:: 12/999,909

Assignee:: The Regents of the University of California (Oakland, CA)

Patent Classifications (CPCs):: G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION

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G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
G01T3/08 - with semiconductor detectors

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DOE Contract Number:: AC02-05CH11231

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 47 OTHER INSTRUMENTATION

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                    Mao, Samuel S, and Perry, Dale L. Layered semiconductor neutron detectors.  United States: N. p., 2013. 
        Web.

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                    Mao, Samuel S, & Perry, Dale L. Layered semiconductor neutron detectors.  United States.

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                    Mao, Samuel S, and Perry, Dale L. Tue .  
        "Layered semiconductor neutron detectors".  United States.  https://www.osti.gov/servlets/purl/1109473.

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@article{osti_1109473,

  title        = {Layered semiconductor neutron detectors},

  author       = {Mao, Samuel S and Perry, Dale L},

  abstractNote = {Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2013},

  month        = {12}

}

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